参数资料
型号: ILQ615-3-X019
厂商: VISHAY SEMICONDUCTORS
元件分类: 光电耦合器
英文描述: 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封装: ROHS COMPLIANT, PLASTIC, SMD, 16 PIN
文件页数: 7/13页
文件大小: 170K
代理商: ILQ615-3-X019
Document Number: 83652
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.5, 20-Dec-07
3
ILD615/ILQ615
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Vishay Semiconductors
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
2.0 mm distance from case bottom
Tsld
260
°C
Package power dissipation ILD615
400
mW
Derate linearly from 25 °C
5.33
mW/°C
Package power dissipation ILQ615
500
mW
Derate linearly from 25 °C
6.67
mW/°C
Isolation test voltage
t = 1.0 s
VISO
5300
VRMS
Creepage distance
≥ 7.0
mm
Clearance distance
≥ 7.0
mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 10 mA
VF
1.0
1.15
1.3
V
Breakdown voltage
IR = 10 A
VBR
6.0
30
V
Reverse current
VR = 6.0 V
IR
0.01
10
A
Capacitance
VR = 0 V, f = 1.0 MHz
CO
25
pF
Thermal resistance, junction to lead
RTHJL
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
6.8
pF
Collector emitter leakage current, -1, -2
VCE = 10 V
ICEO
2.0
50
nA
Collector emitter leakage current, -3, -4
VCE = 10 V
ICEO
5.0
100
nA
Collector emitter breakdown voltage
ICE = 0.5 mA
BVCEO
70
V
Emitter collector breakdown voltage
IE = 0.1 mA
BVECO
7.0
V
Thermal resistance, junction to lead
RTHJL
500
K/W
PACKAGE TRANSFER CHARACTERISTICS
Channel/channel CTR match
IF = 10 mA, VCE = 5.0 V
CTRX/CTRY
1 to 1
2 to 1
COUPLER
Capacitance (input to output)
VIO = 0 V, f = 1.0 MHz
CIO
0.8
pF
Insulation resistance
VIO = 500 V, TA = 25 °C
RS
1012
1014
Ω
Channel to channel isolation
500
VAC
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
相关PDF资料
PDF描述
ILD615-1X001 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
ILD615-2X019 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
ILQ615-2X001 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
ILQ615-1-X019 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
ILD615-3-X006 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
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