参数资料
型号: IMB11A
厂商: Rohm CO.,LTD.
英文描述: General purpose (dual digital transistors)
中文描述: 通用(双数字晶体管)
文件页数: 1/3页
文件大小: 74K
代理商: IMB11A
EMB11 / UMB11N / IMB11A
Transistors
Rev.A
1/2
General purpose
(dual digital transistors)
EMB11 / UMB11N / IMB11A
Features
1) Two DTA114E chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr1 and
DTr2.
Equivalent circuit
EMB11 / UMB11N
IMB11A
DTr2
DTr1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
(6)
(4)
(5)
(6)
R1
R2
R1
DTr2
DTr1
R1
R2
R1
R2=10k
R1=10k
R2=10k
R1=10k
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
Limits
Unit
VCC
50
V
40
V
VIN
10
IO
50
mA
IC (Max.)
100
Tj
150
C
Tstg
55 to +150
C
Pd
EMB11, UMB11N
150 (TOTAL)
mW
IMB11A
300 (TOTAL)
1
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
Power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
External dimensions (Unit : mm)
ROHM : EMT6
EMB11
ROHM : UMT6
EIAJ : SC-88
UMB11N
Abbreviated symbol : B11
ROHM : SMT6
EIAJ : SC-74
IMB11A
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
1.0
1.6
相关PDF资料
PDF描述
IMB2A General purpose(dual digital transistors)
IMC-1210-1000.120% 1 ELEMENT, 0.1 uH, NON-MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IMC-1210-1000.06820% 1 ELEMENT, 0.068 uH, NON-MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IMC-1210-1000.05620% 1 ELEMENT, 0.056 uH, NON-MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IMC-1210-1000.03320% 1 ELEMENT, 0.033 uH, NON-MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
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