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参数资料
| 型号： | IMH11A |
| 厂商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（双数字晶体管） |
| 文件页数： | 1/3页 |
| 文件大小： | 44K |
| 代理商： | IMH11A |
EMH11 / UMH11N / IMH11A
Transistors
General purpose (dual digital transistors)
EMH11 / UMH11N / IMH11A
Features
1) Two DTC114E chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both DTr1 and DTr2.
Equivalent circuit
R1=10k
R2=10k
R1=10k
R2=10k
DTr2
DTr1
(3)
(2)
(1)
(4)
(5)
(6)
R1
R2
R1
DTr2
DTr1
(4)
(5)
(6)
(3)
(2)
(1)
R1
R2
R1
EMH11 / UMH11N
IMH11A
Packaging specifications
Package
Taping
Code
UMH11N
EMH11
Type
IMH11A
TN
3000
T2R
8000
T110
3000
Basic ordering
unit (pieces)
External dimensions (Units : mm)
Abbreviated symbol : H11
ROHM : EMT6
ROHM : SMT6
EIAJ : SC-74
EMH11
IMH11A
ROHM : UMT6
EIAJ : SC-88
UMH11N
Abbreviated symbol : H11
Each lead has same dimensions
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
1.0
1.6
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IMH11AT110 | 功能描述:开关晶体管 - 偏压电阻器 DUAL NPN 50V 50MA SOT-457 RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| IMH14 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SO |
| IMH14A | 制造商:ROHM 制造商全称:Rohm 功能描述:General purpose (dual digital transistors) |
| IMH14AT108 | 功能描述:开关晶体管 - 偏压电阻器 DUAL NPN 50V 100MA RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| IMH15 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SO |
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