参数资料
型号: IN74HC365
厂商: INTEGRAL JOINT STOCK COMPANY
英文描述: HEX 3-STATE NONINVERTING BUFFER WITH COMMON ENABLES (High-Performance Silicon-Gate CMOS)
中文描述: 六角三态同相缓冲区通用启用(高性能硅栅CMOS)
文件页数: 4/5页
文件大小: 142K
代理商: IN74HC365
IN74HC365
4
AC ELECTRICAL CHARACTERISTICS
(C
L
=50pF,Input t
r
=t
f
=6.0 ns)
Symbol
Parameter
V
CC
V
Guaranteed Limit
25
°
C
to
-55
°
C
120
24
20
26
220
44
37
47
220
44
37
47
60
12
10
13
10
10
15
15
85
°
C
125
°
C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A to
Output Y (Figures 1 and 3)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
-
-
150
30
180
36
31
330
66
56
330
66
56
90
18
15
10
15
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay ,Output
Enable
Output Y (Figures 2 and 4)
Maximum Propagation Delay ,Output
Enable
Output Y (Figures 2 and 4)
t
TLH
, t
THL
Maximum Output Transition Time, Any
Output
(Figures 1 and 3)
C
IN
Maximum Input Capacitance
C
OUT
Maximum
Capacitance (Output in High-Impedance
State)
to
275
55
ns
t
PZL
,
t
PZH
to
275
55
ns
75
15
ns
pF
pF
Three-State
Output
Power Dissipation Capacitance (Per
Buffer)
Used to determine the no-load dynamic
power
P
D
=C
PD
V
CC
Typical @25
°
C,V
CC
=5.0 V
C
PD
consumption:
2
f+I
CC
V
CC
40
pF
Figure 1. Switching Waveforms
Figure 2. Switching Waveforms
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相关代理商/技术参数
参数描述
IN74HC365A 制造商:IKSEMICON 制造商全称:IK Semicon Co., Ltd 功能描述:Hex 3-State Noninverting Buffer with Common Enables High-Performance Silicon-Gate CMOS
IN74HC365AD 制造商:IKSEMICON 制造商全称:IK Semicon Co., Ltd 功能描述:Hex 3-State Noninverting Buffer with Common Enables High-Performance Silicon-Gate CMOS
IN74HC365AN 制造商:IKSEMICON 制造商全称:IK Semicon Co., Ltd 功能描述:Hex 3-State Noninverting Buffer with Common Enables High-Performance Silicon-Gate CMOS
IN74HC367A 制造商:IKSEMICON 制造商全称:IK Semicon Co., Ltd 功能描述:Hex 3-State Noninverting Buffer with Separate 2-Bit and 4-Bit Sections High-Performance Silicon-Gate CMOS
IN74HC367AD 制造商:IKSEMICON 制造商全称:IK Semicon Co., Ltd 功能描述:Hex 3-State Noninverting Buffer with Separate 2-Bit and 4-Bit Sections High-Performance Silicon-Gate CMOS