IN74LVU04
2
MAXIMUM RATINGS
*
Symbol
V
CC
I
IK
*
1
I
OK
*
2
I
O
*
3
Parameter
Value
-0.5
÷
+7.0
±
20
±
50
±
25
Unit
V
mA
mA
mA
DC supply voltage (Referenced to GND)
DC input diode current
DC output diode current
DC
output
source
-bus driver outputs
DC
V
CC
current
- bus driver outputs
DC
GND
current
- bus driver outputs
Power dissipation per package, plastic
DIP+
SOIC
package+
Storage temperature
Lead temperature, 1.5 mm from Case for
10 seconds (Plastic DIP ), 0.3 mm (SOIC
Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 12 mW/
°
C from 70
°
to 125
°
C
SOIC Package: : - 8 mW/
°
C from 70
°
to 125
°
C
*
1
: V
I
<
-0.5V or V
I
>
V
CC
+0.5V
*
2
: Vo
<
-0.5V or Vo
>
V
CC
+0.5V
*
3
: -0.5V
<
Vo
<
V
CC
+0.5V
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V
CC
DC Supply Voltage (Referenced to
GND)
V
IN
, V
OUT
DC Input Voltage, Output Voltage
(Referenced to GND)
T
A
Operating Temperature, All Package
Types
t
r
, t
f
Input Rise and Fall
Time
2.0 V
≤
V
CC
<2.7 V
2.7 V
≤
V
CC
<3.6 V
3.6 V
≤
V
CC
≤
5.5 V
This device contains protection circuitry to guard against damage due to high static
voltages or electric fields. However, precautions must be taken to avoid applications of any voltage
higher than maximum rated voltages to this high-impedance circuit. For proper operation, V
IN
and
V
OUT
should be constrained to the range GND
≤
(V
IN
or V
OUT
)
≤
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or
V
CC
). Unused outputs must be left open.
or
sink
current
I
CC
for
types
with
±
50
mA
I
GND
for
types
with
±
50
mA
P
D
750
500
mW
Tstg
T
L
-65
÷
+150
260
°
C
°
C
Min
1.0
Max
5.5
Unit
V
0
V
CC
V
-40
+125
°
C
1.0 V
≤
V
CC
<2.0 V
0
0
0
0
500
200
100
50
ns