参数资料
| 型号： | INA149AID |
| 厂商： | Texas Instruments |
| 文件页数： | 20/26页 |
| 文件大小： | 0K |
| 描述： | IC AMP UNITY GAIN DIFF 8SOIC |
| 标准包装： | 75 |
| 放大器类型： | 差分 |
| 电路数： | 1 |
| 转换速率： | 5 V/µs |
| -3db带宽： | 500kHz |
| 电压 - 输入偏移： | 350µV |
| 电流 - 电源： | 810µA |
| 电流 - 输出 / 通道： | 25mA |
| 电压 - 电源，单路/双路(±)： | 4 V ~ 36 V，±2 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 其它名称： | 296-33286-5 INA149AID-ND |
SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012
ELECTRICAL CHARACTERISTICS: V+ = +15 V and V– = –15 V
At TA = +25°C, RL = 2 kΩ connected to ground, and VCM = REFA = REFB = GND, unless otherwise noted.
INA149
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GAIN
Initial
VOUT = ±10.0 V
1
V/V
Gain error
VOUT = ±10.0 V
±0.005
±0.02
%FSR
Gain
vs temperature, TA = –40°C to +125°C
±1.5
±10
ppm/°C
Nonlinearity
±0.0005
±0.001
%FSR
OFFSET VOLTAGE
350
1100
V
Initial offset
vs temperature, TA = –40°C to +125°C
3
15
V/°C
vs supply (PSRR), VS = ±2 V to ±18 V
90
120
dB
INPUT
Differential
800
k
Ω
Impedance
Common-mode
200
k
Ω
Differential
–13.5
13.5
V
Voltage range
Common-mode
–275
275
V
At dc, VCM = ±275 V
90
100
dB
vs temperature, TA = –40°C to +125°C, at dc
90
dB
Common-mode rejection
(CMRR)
At ac, 500 Hz, VCM = 500 VPP
90
dB
At ac, 1 kHz, VCM = 500 VPP
90
dB
OUTPUT
Voltage range
–13.5
13.5
V
Short-circuit current
±25
mA
Capacitive load drive
No sustained oscillations
10
nF
OUTPUT NOISE VOLTAGE
0.01 Hz to 10 Hz
20
VPP
10 kHz
550
nV/
√Hz
DYNAMIC RESPONSE
Small-signal bandwidth
500
kHz
Slew rate
VOUT = ±10-V step
1.7
5
V/s
Full-power bandwidth
VOUT = 20 VPP
32
kHz
Settling time
0.01%, VOUT = 10-V step
7
s
POWER SUPPLY
Voltage range
±2
±18
V
VS = ±18 V, VOUT = 0 V
810
900
A
Quiescent current
vs temperature, TA = –40°C to +125°C
1.1
mA
TEMPERATURE RANGE
Specified
–40
+125
°C
Operating
–55
+150
°C
Storage
–65
+150
°C
Copyright 2011–2012, Texas Instruments Incorporated
3
Product Folder Link(s): INA149
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