参数资料
型号: IP4264CZ8-40-TTL
厂商: NXP Semiconductors N.V.
元件分类: 电路保护
英文描述: Integrated (U)SIM card passive filter array with ESD protection
封装: IP4264CZ8-10-TTL<SOT972-2 (HXSON8)|<<http://www.nxp.com/packages/SOT972-2.html<1<Always Pb-free,;IP4264CZ8-20-TTL<SOT1166-1 (HUSON8)|<<http://www.nxp.com/packages/SOT1166
文件页数: 4/15页
文件大小: 178K
代理商: IP4264CZ8-40-TTL
IP4264CZ8-10_20_40-TTL
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 12 October 2011
4 of 15
NXP Semiconductors
IP4264CZ8-10/20/40-TTL
Integrated (U)SIM card passive filter array with ESD protection
6. Characteristics
Table 5.
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
R
s(ch)
channel series
resistance
Table 6.
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
I
RM
reverse leakage
current
V
BR
breakdown voltage
IP4264CZ8-10-TTL
C
ch
channel capacitance
[1]
Guaranteed by design.
[2]
Total line capacitance including diode capacitance, per channel.
[3]
Pins 4 and 5 to ground.
Channel resistance
Conditions
R1, R3
R2
Min
85
40
Typ
100
47
Max
115
54
Unit
Channel characteristics
Conditions
V
I
= 3 V
Min
-
Typ
-
Max
50
Unit
nA
I
test
= 1 mA
6
-
10
V
f = 1 MHz
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
f = 1 MHz
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
[1][2]
8
4
10
6
12
8
pF
pF
C
d
diode capacitance
[1][3]
8
4
10
6
12
8
pF
pF
IP4264CZ8-20-TTL
C
ch
channel capacitance
f = 1 MHz
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
[1][2]
-
-
17
11
20
15
pF
pF
IP4264CZ8-40-TTL
C
ch
channel capacitance
f = 1 MHz
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
[1][2]
-
-
35
23
40
28
pF
pF
IP4264CZ8-20-TTL and IP4264CZ8-40-TTL
C
d
diode capacitance
f = 1 MHz
V
bias(DC)
= 0 V
V
bias(DC)
= 2.5 V
[3]
12
8
16
11
20
14
pF
pF
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