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参数资料
| 型号： | IPB050N06NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢ Power-Transistor |
| 中文描述： | 的OptiMOS㈢功率晶体管 |
| 文件页数： | 1/10页 |
| 文件大小： | 451K |
| 代理商： | IPB050N06NG |
IPP050N06N G IPB050N06N G
Opti
MOS
Power-Transistor
Features
For fast switching converters and sync. rectification
N-channel enhancement - normal level
175 °C operating temperature
Avalanche rated
Pb-free lead plating, RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
1)
100
A
T
C
=100 °C
100
Pulsed drain current
I
D,pulse
T
C
=25 °C
2)
400
Avalanche energy, single pulse
E
AS
I
D
=100 A,
R
GS
=25
810
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=100 A,
V
DS
=48 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
300
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
2)
See figure 3
1)
Current is limited by bondwire; with an R
thJC
=0.5 the chip is able to carry 160A
V
DS
60
V
R
DS(on),max SMDversion
4.7
m
I
D
100
A
Product Summary
Type
IPP050N06L
IPB050N06L
Package
P-TO220-3-1
P-TO263-3-2
Marking
050N06L
050N06L
Rev. 1.11
page 1
2006-07-06
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB050N06NGATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 60V 100A TO-263 |
| IPB051NE8N G | 功能描述:MOSFET OptiMOS 2 PWR TRANST 85V 100A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB051NE8NG | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| IPB051NE8NG_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS?2 Power-Transistor Features N-channel, normal level 175 °C operating temperature |
| IPB051NE8NGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 85V 100A 3-Pin(2+Tab) TO-263 |
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