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参数资料
| 型号： | IPB60R199CP |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CoolMOS Power Transistor |
| 中文描述： | 的CoolMOS功率晶体管 |
| 文件页数： | 3/10页 |
| 文件大小： | 347K |
| 代理商： | IPB60R199CP |
IPB60R199CP
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
1520
-
pF
Output capacitance
C
oss
-
72
-
Effective output capacitance, energy
related
6)
C
o(er)
-
69
-
Effective output capacitance, time
related
7)
C
o(tr)
-
180
-
Turn-on delay time
t
d(on)
-
10
-
ns
Rise time
t
r
-
5
-
Turn-off delay time
t
d(off)
-
50
-
Fall time
t
f
-
5
-
Gate Charge Characteristics
Gate to source charge
Q
gs
-
8
-
nC
Gate to drain charge
Q
gd
-
11
-
Gate charge total
Q
g
-
32
43
Gate plateau voltage
V
plateau
-
5.0
-
V
Reverse Diode
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=9.9 A,
T
j
=25 °C
-
0.9
1.2
V
Reverse recovery time
t
rr
-
340
-
ns
Reverse recovery charge
Q
rr
-
5.5
-
μC
Peak reverse recovery current
I
rrm
-
33
-
A
1)
J-STD20 and JESD22
2)
Pulse width
t
p
limited by
T
j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f.
Values
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
V
DD
=400 V,
V
GS
=10 V,
I
D
=9.9 A,
R
G
=3.3
V
DD
=400 V,
I
D
=9.9 A,
V
GS
=0 to 10 V
V
GS
=0 V,
V
DS
=0 V
to 480 V
5)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain connection. PCB
is vertical without blown air
V
R
=400 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
6)
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
7)
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
4)
I
SD
<=I
D
, di/dt<=200A/μs, V
DClink
=400V, V
peak
<V
(BR)DSS
, T
j
<T
jmax
, identical low side and high side switch.
Rev. 2.0
page 3
2006-06-19
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB60R199CP_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:CoolMOS Power Transistor |
| IPB60R199CPA | 功能描述:MOSFET 600V CoolMOS Power Transistor RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB60R199CPAATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 16A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel |
| IPB60R199CPATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 16A TO-263 |
| IPB60R199CPXT | 制造商:Infineon Technologies 功能描述:Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) TO-263 |
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