- 您现在的位置：买卖IC网 > PDF目录384485 > IPD06N03LBG (INFINEON TECHNOLOGIES AG) OptiMOS㈢2 Power-Transistor PDF资料下载
参数资料
| 型号： | IPD06N03LBG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 2/9页 |
| 文件大小： | 295K |
| 代理商： | IPD06N03LBG |
IPD06N03LB G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.8
K/W
SMD version, device on PCB
R
thJA
minimal footprint
-
-
75
6 cm
2
cooling area
5)
-
-
50
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
30
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=40 μA
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
10
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V,
I
D
=30 A
-
7.2
9.1
m
V
GS
=10 V,
I
D
=50 A
-
5.0
6.1
Gate resistance
R
G
-
1
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=50 A
39
78
-
S
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Values
1)
Current is limited by bondwire; with an
R
thJC
=1.8 K/W the chip is able to carry 87 A.
3)
See figure 3
4)
T
j,max
=150 °C and duty cycle
D
<0.25 for
V
GS
<-5 V
1)
J-STD20 and JESD22
Rev. 1.7
page 2
2006-05-15
相关PDF资料 |
PDF描述 |
|---|---|
| IPD09N03L | OptiMOS Buck converter series |
| IPD10N03LA | OptiMOS2 Power-Transistor |
| IPF10N03LA | OptiMOS2 Power-Transistor |
| IPS10N03LA | OptiMOS2 Power-Transistor |
| IPU10N03LA | OptiMOS2 Power-Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPD06N03LBGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 |
| IPD06N03LZGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 |
| IPD075N03L | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated |
| IPD075N03L G | 功能描述:MOSFET N-CH 30V 30A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD075N03LG | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
发布紧急采购，3分钟左右您将得到回复。