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参数资料
| 型号： | IPD09N03L |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Buck converter series |
| 中文描述： | 的OptiMOS降压转换器系列 |
| 文件页数： | 3/8页 |
| 文件大小： | 135K |
| 代理商： | IPD09N03L |
2002-01-17
Page 3
IPD09N03L
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=30A
23.8
47.5
-
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
R
G
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
1160
450
1550 pF
600
Reverse transfer capacitance
Gate resistance
-
120
175
-
-
1.5
7.4
-
ns
Turn-on delay time
V
DD
=15V,
V
GS
=10V,
I
D
=15A,
R
G
=5.4
11.1
Rise time
13
20
Turn-off delay time
Fall time
-
-
28.4
7.6
42.6
11.4
Gate Charge Characteristics
Gate to source charge
Q
gs
Q
gd
Q
g
V
DD
=15V,
I
D
=15A
-
3
4
nC
Gate to drain charge
-
9.2
12.5
Gate charge total
V
DD
=15V,
I
D
=15A,
V
GS
=0 to 5V
-
18.2
24.2
Output charge
Q
oss
V
DS
=15V,
I
D
=15A,
V
GS
=0V
-
16.5
21.9
nC
Gate plateau voltage
V
(plateau)
V
DD
=15V,
I
D
=15A
-
2.7
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
30
A
Inv. diode direct current, pulsed
I
SM
V
SD
t
rr
Q
rr
-
-
-
120
1.2
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
GS
=0V,
I
F
=30A
0.9
V
V
R
=-V,
I
F=
l
S
,
d
i
F
/d
t
=100A/μs
-
-
31
29
39
37
ns
nC
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相关代理商/技术参数 |
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| IPD09N03LA | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD09N03LA G | 功能描述:MOSFET N-CH 25V 50A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD09N03LAG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPD09N03LAGBUMA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 50A DPAK |
| IPD09N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 50A 3-Pin(2+Tab) TO-252 |
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