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参数资料
| 型号： | IPD09N03LA |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS 2 Power-Transistor |
| 中文描述： | 的OptiMOS 2功率晶体管 |
| 文件页数： | 10/10页 |
| 文件大小： | 348K |
| 代理商： | IPD09N03LA |
IPD09N03LA
IPU09N03LA
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strae 53
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts started herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.4
page 10
2004-02-04
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PDF描述 |
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| IPD09N03LBG | OptiMOS㈢2 Power-Transistor |
| IPD10N03LAG | OptiMOS㈢2 Power-Transistor |
| IPF10N03LAG | OptiMOS㈢2 Power-Transistor |
| IPD127N06LG | OptiMOS㈢ Power-Transistor |
| IPD12N03LBG | OptiMOS㈢2 Power-Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPD09N03LA G | 功能描述:MOSFET N-CH 25V 50A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD09N03LAG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPD09N03LAGBUMA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 50A DPAK |
| IPD09N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 50A 3-Pin(2+Tab) TO-252 |
| IPD09N03LB G | 功能描述:MOSFET N-CH 30V 50A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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