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参数资料
| 型号： | IPD12N03L |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Buck converter series |
| 中文描述： | 的OptiMOS降压转换器系列 |
| 文件页数： | 2/8页 |
| 文件大小： | 152K |
| 代理商： | IPD12N03L |
2003-01-17
Page 2
IPD12N03L
IPU12N03L
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
1
1.5
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
100
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
-
75
50
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
V
(BR)DSS
30
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=50μA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
=30V,
V
GS
=0V,
T
j
=25°C
V
DS
=30V,
V
GS
=0V,
T
j
=125°C
I
DSS
-
-
0.01
10
1
100
μA
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
I
GSS
-
1
100
nA
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=30A
R
DS(on)
-
11.5
14.7
m
Drain-source on-state resistance
V
GS
=10V,
I
D
=30A
R
DS(on)
-
8.1
10.4
1Current limited by bondwire ; with an
R
thJC
= 1.5K/W the chip is able to carry
I
D
= 79A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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相关代理商/技术参数 |
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| IPD12N03LB G | 功能描述:MOSFET N-CH 30V 30A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| IPD12N03LBGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 |
| IPD135N03L G | 功能描述:MOSFET N-CH 30V 30A 13.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD135N03LG | 功能描述:MOSFET N-CH 30V 30A TO252-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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