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参数资料
| 型号： | IPD144N06NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢ Power-Transistor |
| 中文描述： | 的OptiMOS㈢功率晶体管 |
| 文件页数： | 3/9页 |
| 文件大小： | 389K |
| 代理商： | IPD144N06NG |
IPD144N06N G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
1400
1900
pF
Output capacitance
C
oss
-
400
530
Reverse transfer capacitance
C
rss
-
100
150
Turn-on delay time
t
d(on)
-
11
18
ns
Rise time
t
r
-
35
53
Turn-off delay time
t
d(off)
-
29
43
Fall time
t
f
-
11
17
Gate Charge Characteristics
4)
Gate to source charge
Q
gs
-
8
10
nC
Gate charge at threshold
Q
g(th)
-
4
6
Gate to drain charge
Q
gd
-
18
27
Switching charge
Q
sw
-
22
32
Gate charge total
Q
g
-
41
54
Gate plateau voltage
V
plateau
-
5.5
-
V
Output charge
Q
oss
V
DD
=30 V,
V
GS
=0 V
-
14
19
Reverse Diode
Diode continous forward current
I
S
-
-
50
A
Diode pulse current
I
S,pulse
-
-
200
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
-
0.94
1.3
V
Reverse recovery time
t
rr
-
45
56
ns
Reverse recovery charge
Q
rr
-
74
93
nC
4)
See figure 16 for gate charge parameter definition
V
R
=30 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
V
DD
=30 V,
V
GS
=10 V,
I
D
=50 A,
R
G
=7.2
V
DD
=30 V,
I
D
=50 A,
V
GS
=0 to 10 V
Rev.1.21
page 3
2006-03-27
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