参数资料
型号: IPD230N06LG
厂商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢ Power-Transistor
中文描述: 的OptiMOS㈢功率晶体管
文件页数: 4/9页
文件大小: 392K
代理商: IPD230N06LG
IPD230N06L G
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
);
V
GS
10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
Z
thJC
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 μs
10 μs
100 μs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
2
10
1
10
0
10
-1
V
DS
[V]
I
D
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
t
p
[s]
10
-4
10
-5
10
-6
10
1
10
0
10
-1
10
-2
Z
t
0
20
40
60
80
100
120
0
50
100
150
200
T
C
[°C]
P
t
0
5
10
15
20
25
30
0
50
100
150
200
T
C
[°C]
I
D
Rev. 1.0
page 4
2006-06-13
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