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参数资料
| 型号： | IPD800N06NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢ Power-Transistor |
| 中文描述： | 的OptiMOS㈢功率晶体管 |
| 文件页数： | 1/9页 |
| 文件大小： | 383K |
| 代理商： | IPD800N06NG |
IPD800N06N G
Opti
MOS
Power-Transistor
Features
For fast switching converters and sync. rectification
N-channel enhancement - normal level
175 °C operating temperature
Avalanche rated
Pb-free lead plating, RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
16
A
T
C
=100 °C
11
Pulsed drain current
I
D,pulse
T
C
=25 °C
1)
64
Avalanche energy, single pulse
E
AS
I
D
=16 A,
R
GS
=25
43
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=16 A,
V
DS
=48 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
47
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
1)
See figure 3
V
DS
60
V
R
DS(on),max
80
m
I
D
16
A
Product Summary
Type
IPD800N06N G
Package
P-TO252-3-11
Marking
800N06N
Rev.1.1
page 1
2006-04-07
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