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参数资料
| 型号： | IPDH4N03LA-G |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OPTIMOS 2 POWER - TRANSISTOR |
| 中文描述： | 掩埋2电源-晶体管 |
| 文件页数： | 1/9页 |
| 文件大小： | 311K |
| 代理商： | IPDH4N03LA-G |
IPDH4N03LA G IPSH4N03LA G
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
Qualified according to JEDEC
1)
for target applications
N-channel, logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
90
A
T
C
=100 °C
77
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
360
Avalanche energy, single pulse
E
AS
I
D
=90 A,
R
GS
=25
150
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=90 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
94
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
25
V
R
DS(on),max
(SMD Version)
4.2
m
I
D
90
A
Product Summary
Type
IPDH4N03LA G
IPSH4N03LA G
Package
P-TO252-3-11
P-TO251-3-11
Ordering Code
Q67042-S4250
Q67042-S4254
Marking
H4N03LA
H4N03LA
Rev. 0.92 - target data sheet
page 1
2004-10-27
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相关代理商/技术参数 |
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| IPDH4N03LAGBUMA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 90A TO252-3-11 |
| IPDH4N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 90A 3-Pin(2+Tab) TO-252 |
| IPDH5N03LA | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPDH5N03LA G | 功能描述:MOSFET N-CH 25V 50A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IPDH5N03LAG | 功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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