参数资料
型号: IPF04N03LAG
厂商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢2 Power-Transistor
中文描述: 的OptiMOS㈢2功率晶体管
文件页数: 1/12页
文件大小: 428K
代理商: IPF04N03LAG
Type
IPD04N03LA G IPF04N03LA G
IPS04N03LA G IPU04N03LA G
Opti
MOS
2 Power-Transistor
Package
Marking
Qualified according to JEDEC
1)
for target applications
N-channel, logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
50
A
T
C
=100 °C
50
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
350
Avalanche energy, single pulse
E
AS
I
D
=45 A,
R
GS
=25
600
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=50 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
115
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
25
V
R
DS(on),max
(SMD version)
3.8
m
I
D
50
A
Product Summary
Type
IPD04N03LA
IPF04N03LA
IPS04N03LA
IPU04N03LA
Package
P-TO252-3-11
P-TO252-3-23
P-TO251-3-11
P-TO251-3-1
Marking
04N03LA
04N03LA
04N03LA
04N03LA
Rev. 1.97
page 1
2006-05-17
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IPF04N03LBG 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor
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