- 您现在的位置：买卖IC网 > PDF目录17335 > IPS021 (International Rectifier)IC MOSFET LS DRIVER 5A TO-220AB PDF资料下载
参数资料
| 型号： | IPS021 |
| 厂商： | International Rectifier |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET LS DRIVER 5A TO-220AB |
| 标准包装： | 50 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 130 毫欧 |
| 电流 - 输出 / 通道： | 1.8A |
| 电流 - 峰值输出： | 10A |
| 电源电压： | 4 V ~ 6 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | *IPS021 |
IPS021(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25 o C unless otherwise specified). PCB mounting uses the standard foot-
print with 70 μ m copper thickness.
Symbol Parameter
Vds
Maximum drain to source voltage
Min.
—
Max.
47
Units
Test Conditions
Vin
Iin, max
Maximum input voltage
Maximum IN current
-0.3
-10
7
+10
V
mA
Isd cont.
Diode max. continous current (1)
(rth=62 o C/W) IPS021
—
2.8
(rth=10 o C/W) IPS021
—
8
A
(rth=80 o C/W)
Isd pulsed Diode max. pulsed current (1)
IPS021S
—
—
2.2
10A
Pd Maximum power dissipation (1)
(rth=62 o C/W) IPS021
(rth=80 o C/W) IPS021S
—
—
2
1.56
W
ESD1
Electrostatic discharge voltage (Human Body)
—
4
C=100pF, R=1500 ?,
ESD2
T stor.
Electrostatic discharge voltage (Machine Model)
Max. storage temperature
—
-55
0.5
150
kV
C=200pF, R=0 ?, L=10 μ H
Tj max.
Tlead
Max. junction temperature.
Lead temperature (soldering, 10 seconds)
-40
—
150
300
o
C
Thermal Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth
Rth
1
2
Thermal
Thermal
resistance
resistance
free air
junction to case
—
—
60
5
—
—
TO-220
Rth
Rth
1
2
Thermal
Thermal
resistance
resistance
with standard footprint
with 1" square footprint
—
—
80
50
—
—
o
C/W
D 2 PAK (SMD220)
Rth
3
Thermal
resistance
junction to case
—
5
—
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max)
Continuous drain to source voltage
—
35
VIH
VIL
I ds
High level input voltage
Low level input voltage
Continuous drain current
4
0
—
6
0.5
1.8
V
A
Tamb=85 o C
( TAmbient = 85 o C, IN = 5V, rth = 60 o C/W, Tj = 125 o C)
Rin Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
0.5
—
5
1
k ?
μ S
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. Notes.
2
www.irf.com
相关PDF资料 |
PDF描述 |
|---|---|
| A9BAA-1606F | FLEX CABLE - AFF16A/AF16/AFE16T |
| IPS0151 | IC MOSFET PWR SWITCH TO-220AB |
| IR6220 | IC DRIVER HIGH SIDE TO-220-5 |
| TARW226K015 | CAP TANT 22UF 15V 10% AXIAL |
| IPS521 | IC MOSFET HS PWR SW 5A TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPS021L | 功能描述:功率驱动器IC IPS 1 Ch Low Side Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IPS021LPBF | 制造商:International Rectifier 功能描述:MOSFET SMART SWITCH SOT-223 |
| IPS021LTR | 功能描述:功率驱动器IC Prot PWR FET Swich 150mOhm 50V 5A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IPS021PBF | 制造商:International Rectifier 功能描述:Power Switch Lo Side 1.8A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:MOSFET SMART SWITCH TO-220 |
| IPS021S | 功能描述:IC MOSFET LS DRIVER 5A D2PAK RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1,000 系列:- 类型:高端/低端驱动器 输入类型:SPI 输出数:8 导通状态电阻:850 毫欧，1.6 欧姆 电流 - 输出 / 通道:205mA，410mA 电流 - 峰值输出:500mA，1A 电源电压:9 V ~ 16 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:20-SOIC（0.295"，7.50mm 宽） 供应商设备封装:PG-DSO-20-45 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。