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参数资料
| 型号： | IPS021L |
| 厂商： | International Rectifier |
| 英文描述： | FULLY PROTECTED POWER MOSFET SWITCH |
| 中文描述： | 充分保护功率MOSFET开关 |
| 文件页数： | 4/11页 |
| 文件大小： | 110K |
| 代理商： | IPS021L |
IPS021L
2
www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max) Continuous drain to source voltage
—
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
oC
(TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC)
—
1.4
A
Rin
Recommended resistor in series with IN pin
0.5
5
k
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
—
1
S
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25
oC unless otherwise specified). PCB mounting uses the standard footprint with 70
m
copper thickness..
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
—
47
Vin
Maximum Input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd cont.
Diode max. continuous current (1)
(rth=125oC/W)
—
1.4
Isd pulsed Diode max. pulsed current (1)
—10
Pd
Maximum power dissipation
(1)
(rth=125oC/W)
—
1
W
ESD1
Electrostatic discharge voltage (Human Body)
—
4
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage (Machine Model)
—
0.5
C=200pF, R=0
, L=10H
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
A
kV
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth1
Thermal resistance with standard footprint
—
100
—
Rth2
Thermal resistance with 1" square footprint
—
50
—
Thermal Characteristics
oC/W
oC
V
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