参数资料
型号: IPS021L
厂商: International Rectifier
文件页数: 2/11页
文件大小: 0K
描述: IC MOSFET LS DRIVER 5A SOT-223
标准包装: 80
类型: 低端
输入类型: 非反相
输出数: 1
导通状态电阻: 130 毫欧
电流 - 输出 / 通道: 1.4A
电流 - 峰值输出: 10A
电源电压: 4 V ~ 6 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 管件
其它名称: *IPS021L
IPS021L
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25 o C unless otherwise specified). PCB mounting uses the standard footprint with 70 μ m
copper thickness..
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Vin
Iin, max
Maximum drain to source voltage
Maximum Input voltage
Maximum IN current
-0.3
-10
47
7
+10
V
mA
Isd cont.
Diode max. continuous current (1)
Maximum power dissipation
(rth=125 o C/W)
Isd pulsed Diode max. pulsed current (1)
(1)
P
d
(rth=125 o C/W)
1.4
10
1
A
W
ESD1
Electrostatic discharge voltage (Human Body)
4
C=100pF, R=1500 ?,
C
ESD2
T stor.
Tj max.
Electrostatic discharge voltage (Machine Model)
Max. storage temperature
Max. junction temperature
-55
-40
0.5
150
+150
kV
o
C=200pF, R=0 ?, L=10 μ H
Thermal Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth 1
Rth 2
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
100
50
o
C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max)
Continuous drain to source voltage
35
VIH
VIL
High level input voltage
Low level input voltage
4
0
6
0.5
V
I ds
Continuous drain current
Tamb=85 o C
( TAmbient = 85 o C, IN = 5V, rth = 100 o C/W, Tj = 125 o C)
1.4
A
Rin Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
0.5
5
1
k ?
μ S
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
2
www.irf.com
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