参数资料
型号: IPS0551T
厂商: International Rectifier
文件页数: 2/10页
文件大小: 0K
描述: IC MOSFET PWR SW 40V 100A TO-220
标准包装: 50
类型: 低端
输入类型: 非反相
输出数: 1
导通状态电阻: 4.5 毫欧
电流 - 输出 / 通道: 35A
电流 - 峰值输出: 100A
工作温度: -40°C ~ 150°C
安装类型: 通孔
封装/外壳: Super-220?-3(直引线)
供应商设备封装: SUPER-220?(TO-273AA)
包装: 管件
其它名称: *IPS0551T
IPS0551T
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25 o C unless otherwise specified). PCB mounting uses the standard foot-
print with 70 μ m copper thickness.
Symbol Parameter
Vds
Maximum drain to source voltage
Min.
Max.
37
Units
Test Conditions
Vin
I+in
Maximum input voltage
Maximum IN current
-0.3
-10
7
+10
V
mA
Isd cont.
Diode max. continuous current (1)
(rth=60 o C/W)
2.8
(rth=5 o C/W)
Isd pulsed Diode max. pulsed current (1)
35
100
A
Pd Maximum power dissipation (1)
(rth=60 o C/W)
2
W
ESD1
ESD2
T stor.
Electrostatic discharge voltage (Human Body)
Electrostatic discharge voltage (Machine Model)
Max. storage temperature
-55
4
0.5
150
kV
C=100pF, R=1500 ?,
C=200pF, R=0 ?, L=10 μ H
Tj max.
Tlead
Max. junction temperature
Lead temperature (soldering, 10 seconds)
-40
+150
300
o
C
Thermal Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth
1
Thermal
resistance free air
60
C/W
Rth
Rth
Rth
2
3
4
Thermal
Thermal
Thermal
resistance to PCB min footprint
resistance to PCB 1" sq. footprint
resistance junction to case
60
35
0.7
a
o
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max)
Continuous drain to source voltage
18
VIH
VIL
High level input voltage
Low level input voltage
4
0
6
0.5
V
I ds
Continuous drain current
Tamb=85 o C
(TAmbient = 85 o C, IN = 5V, rth = 80 o C/W, Tj = 125 o C)
( TAmbient = 85 o C, IN = 5V, rth = 5 o C/W, Tj = 125 o C)
8
35
A
Rin Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
0.1
0.5
1
k ?
μ S
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operation at higher switching frequencies is possible. See Appl. Notes.
2
www.irf.com
相关PDF资料
PDF描述
IPS1011RTRLPBF IC IPS SW LOW SIDE DPAK
IPS1021RTRLPBF IC IPS SW LOW SIDE DPAK
IPS1031RTRLPBF IC IPS SW LOW SIDE DPAK
IPS1042GTRPBF IC IPS SW LOW SIDE 2CH 8-SOIC
IPS1052GTRPBF IC IPS SW LOW SIDE 2CH 8-SOIC
相关代理商/技术参数
参数描述
IPS0551T(SMD220) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 37V V(BR)DSS | TO-273VAR
IPS0551T(TO220) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 37V V(BR)DSS | TO-273AA
IPS05N03LA 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor
IPS05N03LA G 功能描述:MOSFET N-CH 25V 50A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IPS05N03LAG 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube