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参数资料
| 型号： | IPS1031STRLPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | IC IPS SW LOW SIDE D2PAK |
| 标准包装： | 800 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 40 毫欧 |
| 电流 - 输出 / 通道： | 3.3A |
| 电流 - 峰值输出： | 18A |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IPS1031( S )( R )PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol
Vds
Vds cont.
Vin
Isd cont.
Parameter
Maximum drain to source voltage
Maximum continuous drain to source voltage
Maximum input voltage
Max. diode continuous current (limited by thermal dissipation)
Min.
-0.3
-
-0.3
?
Max.
36
28
6
4
Units
V
V
V
A
Maximum power dissipation (internally limited by thermal protection)
Pd
Rth=5°C/W IPS1031
Rth=40°C/W IPS1031S 1” sqr. footprint
Rth=50C/W IPS1031R 1” sqr. footprint
?
?
?
25
3.1
2.5
W
Electrostatic discharge voltage (Human body) C=100pF, R=1500 ?
Between drain and source
?
4
ESD
Tj max.
Tsoldering
Other combinations
Electrostatic discharge voltage (Machine Model) C=200pF,R=0 ?
Between drain and source
Other combinations
Max. storage & operating temperature junction temperature
Lead soldering temperature (10 seconds)
?
?
?
-40
?
3
0.5
0.3
150
300
kV
°C
°C
Thermal Characteristics
Symbol
Rth1
Rth2
Rth1
Rth2
Rth3
Rth1
Rth2
Rth3
Parameter
Thermal resistance junction to ambient IPS1031 TO-220 free air
Thermal resistance junction to case IPS1031 TO-220
Thermal resistance junction to ambient IPS1031S D2Pak std. footprint
Thermal resistance junction to ambient IPS1031S D2Pak 1” sqr. footprint
Thermal resistance junction to case IPS1031S D2Pak
Thermal resistance junction to ambient IPS1031R D-Pak std. footprint
Thermal resistance junction to ambient IPS1031R D-Pak 1” sqr. footprint
Thermal resistance junction to case IPS1031R D-Pak
Typ.
50
3.9
60
40
3.9
70
50
3.9
Max.
?
?
?
?
?
?
?
?
Units
°C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
VIH
VIL
Parameter
High level input voltage
Low level input voltage
Min.
4.5
0
Max.
5.5
0.5
Units
Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V
Ids
Rin
Max L
Max F
Max. t rise
Rth=5°C/W IPS1031
Rth=40°C/W IPS1031S 1” sqr. footprint
Rth=50C/W IPS1031R 1” sqr. footprint
Recommended resistor in series with IN pin to generate a diagnostic
Max recommended load inductance (including line inductance) (1)
Max. frequency (switching losses = conduction losses)
Max. input rising time
?
?
?
0.5
?
?
?
9.5
3.3
3
10
50
1.5
1
A
k ?
μH
kHz
μs
(1) Higher inductance is possible if maximum load current is limited - see figure 11
www.irf.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPS1031STRR | 制造商:International Rectifier 功能描述: |
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| IPS1041 | 制造商:International Rectifier 功能描述: |
| IPS1041L | 制造商:International Rectifier 功能描述: |
| IPS1041LPBF | 功能描述:功率驱动器IC 40V 1A SOT RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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