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参数资料
| 型号： | IPS1051LTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC IPS SW LOW SIDE 1CH SOT-223 |
| 标准包装： | 2,500 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 160 毫欧 |
| 电流 - 输出 / 通道： | 1.4A |
| 电流 - 峰值输出： | 2.8A |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
IPS1051LPbF / IPS1052GPbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol
Vds
Vds cont.
Vin
Isd cont.
Parameter
Maximum drain to source voltage
Maximum continuous drain to source voltage
Maximum input voltage
Max diode continuous current (limited by thermal dissipation)
Min.
-0.3
-
-0.3
?
Max.
36
28
6
1.3
Units
V
V
V
A
Maximum power dissipation (internally limited by thermal protection)
Pd
Rth=60°C/W IPS1051L 1” sqrt. footprint
Rth=100°C/W IPS1052G std. footprint
2
1.25
W
Electrostatic discharge voltage (Human body) C=100pF, R=1500 ?
Between drain and source
?
4
ESD
Tj max.
Other combinations
Electrostatic discharge voltage (Machine Model) C=200pF,R=0 ?
Between drain and source
Other combinations
Max. storage & operating temperature junction temperature
?
?
?
-40
3
0.5
0.3
150
kV
°C
Thermal Characteristics
Symbol
Rth1
Rth2
Rth1
Rth1
Parameter
Thermal resistance junction to ambient IPS1051L SOT-223 std. footprint
Thermal resistance junction to ambient IPS1051L SOT-223 1” sqrt. footprint
Thermal resistance junction to ambient IPS1052G SO-8 std. Footprint
1 die active
Thermal resistance junction to ambient IPS1052G SO-8 std. footprint
2 die active
Typ.
100
60
100
130
Max.
?
?
?
?
Units
°C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
VIH
VIL
Ids
Rin
Max L
Max. F
Max. t rise
Parameter
High level input voltage
Low level input voltage
Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V
Rth=60°C/W IPS1051L 1” sqrt. Footprint
Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V
Rth=100°C/W IPS1052G 1” sqrt. Footprint - 1 die active
Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V
Rth=130°C/W IPS1052G 1” sqrt. Footprint - 2 die active
Recommended resistor in series with IN pin to generate a diagnostic
Max. recommended load inductance ( including line inductance )(1)
Max. frequency
Max. input rise time
Min.
4.5
0
?
?
0.5
?
?
?
Max.
5.5
0.5
1.4
1.1
0.5
10
30
10
1
Units
V
A
A
A
k ?
μH
kHz
μs
(1) Higher inductance is possible if maximum load current is limited - see figure 11
www.irf.com
2
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相关代理商/技术参数 |
参数描述 |
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| IPS1052G | 制造商:International Rectifier 功能描述: |
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| IPS105N03L G | 功能描述:MOSFET N-CH 30V 35A 10.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPS105N03LG | 制造商:Infineon Technologies AG 功能描述:MOSFET N-Channel 30V 35A OptiMOS3 TO251 |
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