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| 型号： | IPS1052GPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | INTELLIGENT POWER SW 2CH 8-SOIC |
| 标准包装： | 95 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 2 |
| 导通状态电阻： | 160 毫欧 |
| 电流 - 输出 / 通道： | 500mA |
| 电流 - 峰值输出： | 2.8A |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
| 产品目录页面： | 1383 (CN2011-ZH PDF) |
Data Sheet No. PD60298_B
IPS1051LPbF / IPS1052GPbF
SINGLE/DUAL CHANNEL
INTELLIGENT POWER LOW SIDE SWITCH
Features
Product Summary
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Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic lev e l input
ESD protection
Optimized Turn On/Off for EMI
Diagnostic on the input current
Rds(on) 250m ? ( max.)
Vclamp 39V
Ishutdown 2.8A (typ.)
Description
The IPS1051LPb F and IPS1052GPbF are Intelligent
Power Switches (IPS) featuring low side MOSFETs with
over-current, over-temperature, ESD protection and drain
to source active clamp. The IPS1052G is a dual channel
device while the IPS1051 is a single channel. These
devices offer protections and the high reliability required in
Packages
harsh environments. Each switch provides efficient
protection by turning OFF the power MOSFET when the
temperature exceeds 165°C or when the drain current
SOT-223
IPS1051LPbF
SO-8
IPS1052GPbF
reaches 3A. The device restarts once the input is cycled.
A serial resistance connected to the input provides the
diagnostic. The avalanche capability is significantly
enhanced by the active clamp and covers most inductive
load demagnetizations.
Typical Connection
+Bat
Load
2-4 (IPS1052G)
1 (IPS1051L) IN
Input R
Control
D
5-6-7-8 (IPS1052G)
2 (IPS1051L)
Input Signal
V Diag
S
1-3 (IPS1052G)
3 (IPS1051L)
www.irf.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPS1052GTRPBF | 功能描述:电源开关 IC - 配电 AUTO PWR SWITCH 1/DUAL CH 250mOhms RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| IPS105N03L G | 功能描述:MOSFET N-CH 30V 35A 10.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPS105N03LG | 制造商:Infineon Technologies AG 功能描述:MOSFET N-Channel 30V 35A OptiMOS3 TO251 |
| IPS105N03LGAKMA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 35A TO251-3 |
| IPS105N03LGXK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251 |
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