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参数资料
| 型号： | IPS5551T |
| 厂商： | International Rectifier |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET HS PWR SW 100A TO-220 |
| 标准包装： | 50 |
| 类型： | 高端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 4.6 毫欧 |
| 电流 - 输出 / 通道： | 35A |
| 电流 - 峰值输出： | 100A |
| 电源电压： | 6 V ~ 18 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 通孔 |
| 封装/外壳： | Super-220?-3（直引线） |
| 供应商设备封装： | SUPER-220?（TO-273AA） |
| 包装： | 管件 |
| 其它名称： | *IPS5551T |
IPS5551T
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage pa-
rameters are referenced to Vcc lead. (Tj = 25 o C unless otherwise specified). PCB mounting uses the standard
footprint with 70 μ m copper thickness
Symbol
Parameter
Min.
Max.
Units
Test Conditions
Vcc -Vin max
Maximum input voltage
Vcc -Vin1 max Max. transient Input voltage (less than 1s)
-0.3
-0.3
30
40
V
Iin max
Maximum input current
-1
20
mA
Vcc -Vout max Maximum output voltage
Diode max. continuous current (1)
Isd cont.
(rth = 62 o C/W)
Diode max. continuous current (1)
Isd1 cont.
-0.3
—
40
2.8
V
A
(rth =
5 o C/W)
—
35
Isd pulsed
Diode max. pulsed current (1)
—
100
Pd
Power dissipation (rth = 62 o C/W)
—
2
W
ESD1
ESD2
T stor.
Electrostatic discharge voltage (Human Body)
Electrostatic discharge voltage (Machine Model)
Max. storage temperature
—
—
-55
tbd
tbd
150
kV
C = 100 pF, R = 1500 ?
C = 200 pF, R = 0 ?, L=10 μ H
Tj max.
Tlead
Max. junction temperature
Lead temperature (soldering 10 seconds)
-40
—
150
300
o
C
Thermal Characteristics
Symbol Parameter
Typ.
Max. Units Test Conditions
Rth
Rth
Rth
Rth
1
2
3
4
Thermal
Thermal
Thermal
Thermal
resistance
resistance
resistance
resistance
free air
with standard footprint
with 1" footprint
junction to case
60
60
35
0.7
?
?
?
?
o
C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Tamb=85 C
Vcc - Vin
Vcc
Iout
I out
o
Continuous input voltage
Supply to power ground voltage
Continuous output current (rth c/amb. < 5 o C/W, Tj = 125 o C)
Continuous output current
(TAmbient = 85 o C, Tj = 125 o C, free air)
6
6
—
—
18
18
35
8
V
A
(1) Limited by junction temperature. Pulsed current is also limited by wiring
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPS5551T(SMD220) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PERIPHERAL DRIVER|1 DRIVER|MOS|SIP|3PIN|PLASTIC |
| IPS5551T(TO220) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PERIPHERAL DRIVER|1 DRIVER|MOS|SIP|3PIN|PLASTIC |
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