- 您现在的位置：买卖IC网 > Datasheet目录331 > IR11682STRPBF (International Rectifier)IC MOSFET DRIVER DUAL 200V 8SOIC Datasheet资料下载
参数资料
| 型号： | IR11682STRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 14/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL 200V 8SOIC |
| 标准包装： | 1 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 100ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 8.6 V ~ 18 V |
| 工作温度： | -25°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | IR11682STRPBFDKR |
IR11682S
Turn-off phase
Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level
where V DS will cross the turn-off threshold V TH1 .
Since the device currents are sinusoidal here, the device VDS will cross the V TH1 threshold with a relatively low
dV/dt. Once the threshold is crossed, the current will start flowing again through the body diode, causing the
VDS voltage to jump negative. Depending on the amount of residual current, VDS may once again trigger the
turn-on threshold; hence, VTH2 is blanked for a time duration t BLANK after VTH1 is triggered. When the device
VDS crosses the positive reset threshold VTH3, t BLANK is terminated and the IC is ready for next conduction
cycle as shown below.
V TH3
I DS
V DS
T1
V TH1
V TH2
Gate Drive
Blanking
T2
MOT
t BLANK
time
Figure 2: Secondary currents and voltages
MOT protection
At very light load or no load condition, the current in SR FET will become discontinuous and could be shorter
than MOT time in some system. If this happens, the SR FET current will flow from drain to source at the end
of MOT. The reverse current discharges output capacitor; stores the energy in transformer and causes
resonant on VDS voltage once the SR FET turns off. The resonant could turn on the gate of IR11682, caused
more reverse current and thus subsequent multi false triggering as shown below in Figure 3.
Figure 3: Waveform without MOT protection
The cycle-by-cycle MOT protection circuit can detect the reverse current situation and disable the next output
gate pulse to avoid this issue. The internal comparator and MOT pulse generator still work under the
protection mode. So the circuit can continuously monitor the load current and come back to normal working
mode once the load current conduction time increased to longer than MOT. This circuit helps to reduce
standby power losses. It also can prevent voltage spike that caused by false triggering at light load.
www.irf.com
14
? 2010 International Rectifier
相关PDF资料 |
PDF描述 |
|---|---|
| IR1168SPBF | IC MOSFET DRIVER DUAL 200V 8SOIC |
| IR1176STR | IC DRIVER RECT SYNC 5V 4A 20SSOP |
| IR2010SPBF | IC DRIVER HIGH/LOW SIDE 16SOIC |
| IR2011PBF | IC DRIVER HIGH/LOW SIDE 8-DIP |
| IR20153STRPBF | IC DRIVER HI SIDE RECHARGE 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IR1168S | 制造商:IRF 制造商全称:International Rectifier 功能描述:DUAL SMART RECTIFIER DRIVER IC |
| IR1168SPBF | 功能描述:开关变换器、稳压器与控制器 200V DUAL SMART HI SPEED SR CTRLLER RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR1168SPBF | 制造商:International Rectifier 功能描述:Smart Rectifier Driver IC |
| IR1168STRPBF | 功能描述:开关变换器、稳压器与控制器 Dual Smartrectifier Drvr IC RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR1169S | 制造商:IRF 制造商全称:International Rectifier 功能描述:ADVANCED SMARTRECTIFIER CONTROL IC |
发布紧急采购，3分钟左右您将得到回复。