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参数资料
| 型号： | IR2086SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | IC DVR FULL BRIDGE HI/LOW 16SOIC |
| 标准包装： | 45 |
| 配置： | 半桥 |
| 输入类型： | 自振荡 |
| 电流 - 峰： | 1.2A |
| 配置数： | 1 |
| 输出数： | 4 |
| 高端电压 - 最大（自引导启动）： | 100V |
| 电源电压： | 9.5 V ~ 15 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC N |
| 包装： | 管件 |
IR2086S(PbF)
Detailed Pin Description continued
COM1, COM2 : Signal ground and power ground for all functions. Due to high current and high frequency
operation, a low impedance circuit board ground plane is highly recommended.
HO1, HO2, LO1, LO2 : High side and low side gate drive pins. The high and low side drivers can directly drive
the gate of a power MOSFET. The drivers are capable of 1A peak source and sink currents. It is recommended
that the high and low drive pins be very close to the gates of the high side and low side MOSFETs to prevent
any delay and distortion of the drive signals.
Vb1, Vb2: High side power input connection. The high side supplies are derived from bootstrap circuits using
low-leakage Schottky diodes and ceramic capacitors. To prevent noise, the Schottky diodes and bypass
capacitors should be very close to the IR2086S.
Vs1, Vs2 : The high side power return connection. Vs should be connected directly to the source terminal of
high side MOSFET with a trace as short as possible.
Vcc : The IC bias input connection for the device. Although the quiescent Vcc current is very low, total supply
current will be higher, depending on the gate charge of the MOSFETs connected to the HO and LO pins, and
the programmed oscillator frequency, Total Vcc current is the sum of quiescent Vcc current and the average
current at HO and LO. Knowing the operating frequency and the MOSFET gate charge (Qg) at selected Vcc
voltage, the average current to drive four power MOSFETs in full-bridge configuration can be calculated from:
Iave = 4 x Qg X fosc
(Note that fosc is equal to the frequency per channel.)
To prevent noise problem, a bypass ceramic capacitor connected to Vcc and COM1 / COM2 should be placed
as close as possible to the IR2086S.
IR2086S has an under voltage lookout feature for the IC bias supply, Vcc. The minimum voltage required on
Vcc to make sure that IC will work within specifications must be higher than 8.5V (9.5V minimum Vcc is
recommended to prevent asymmetrical gates signals on HO and LO pins that are expected when Vcc is
between 7.5V and 8.5V).
6
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相关代理商/技术参数 |
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|---|---|
| IR2086STRPBF | 功能描述:功率驱动器IC Hi Spd 100V 50% Duty Cycle Full Brdg Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR-21 | 制造商:Inter-Market Inc (IMLEC) 功能描述:Unspecified |
| IR2100A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-to-DC Voltage Converter |
| IR2100A-007 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-to-DC Voltage Converter |
| IR2100A-008 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-to-DC Voltage Converter |
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