参数资料
型号: IR2102
厂商: International Rectifier
文件页数: 1/14页
文件大小: 0K
描述: IC DRIVER HIGH/LOW SIDE 8-DIP
标准包装: 50
配置: 高端和低端,独立
输入类型: 反相
延迟时间: 160ns
电流 - 峰: 210mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-DIP
包装: 管件
其它名称: *IR2102
Data Sheet No. PD60043 Rev.O
IR2101 (S) /IR2102 (S) &(PbF)
HIGH AND LOW SIDE DRIVER
Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Product Summary
V OFFSET
600V max.
?
?
?
?
?
?
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V, and 15V logic input compatible
Matched propagation delay for both channels
Outputs in phase with inputs (IR2101) or out of
phase with inputs (IR2102)
Also available LEAD-FREE
I O +/-
V OUT
t on/off (typ.)
Delay Matching
Packages
130 mA / 270 mA
10 - 20V
160 & 150 ns
50 ns
Description
The IR2101(S)/IR2102(S) are high voltage, high speed
power MOSFET and IGBT drivers with independent
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The logic
8-Lead SOIC
IR2101S/IR2102S
8-Lead PDIP
IR2101/IR2102
input is compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V CC
V CC
V B
HIN
HIN
HO
LIN
LIN
COM
V S
LO
TO
LOAD
IR2101
V CC
up to 600V
V CC
V B
HIN
HIN
HO
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
LIN
LIN
COM
V S
LO
TO
LOAD
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
www.irf.com
IR2102
1
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