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| 型号： | IR2113-1PBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR HI/LO SIDE 14DIP |
| 标准包装： | 25 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 120ns |
| 电流 - 峰： | 2.5A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 14-DIP（0.300"，7.62mm），13 引线 |
| 供应商设备封装： | 16-DIP，15 引线 |
| 包装： | 管件 |
| 产品目录页面： | 1380 (CN2011-ZH PDF) |
| 其它名称： | *IR2113-1PBF |
Data Sheet No. PD60147 rev.U
IR2110( - 1 - 2)(S)PbF/IR2113( - 1 - 2)(S)PbF
HIGH AND LOW SIDE DRIVER
Features
? Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
Product Summary
V OFFSET (IR2110)
(IR2113)
500V max.
600V max.
?
?
?
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
I O +/-
V OUT
2A / 2A
10 - 20V
?
?
?
?
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
t on/off (typ.) 120 & 94 ns
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
Packages
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan-
nels. Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
14-Lead PDIP
IR2110/IR2113
16-Lead SOIC
IR2110S/IR2113S
drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
Typical Connection
HO
up to 500V or 600V
V DD
V DD
V B
HIN
HIN
V S
TO
SD
LIN
V SS
V CC
SD
LIN
V SS
V CC
COM
LO
LOAD
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1
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| IR2113-2 | 功能描述:IC MOSFET DRVR HI/LO SIDE 16-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| IR2113-2PBF | 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 2A 120ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2113E6 | 制造商:International Rectifier 功能描述:MOSFET DRVR 600V 2A 2-OUT Hi/Lo Side Non-Inv 18-Pin LLCC 制造商:International Rectifier 功能描述:MOSFET DRVR 600V 2A 2-OUT HI/LO SIDE NON-INV 18LLCC - Bulk 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH/LOW SIDE, LCC-18; Device Type:High Side / Low Side; Module Configuration:High Side, Low Side; Peak Output Current:2A; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:LCC; No. of Pins:18 ;RoHS Compliant: No |
| IR2113E6SCB | 制造商:International Rectifier 功能描述:CONTROL IC, HI-REL, QIRL - Bulk |
| IR2113E6SCS | 制造商:International Rectifier 功能描述:MOSFET DRVR 600V 2A 2-OUT Hi/Lo Side Non-Inv 18-Pin LLCC 制造商:International Rectifier 功能描述:CONTROL IC, HI-REL, QIRL - Bulk |
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