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| 型号： | IR2125PBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/17页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER LIMITING 8-DIP |
| 标准包装： | 50 |
| 配置： | 高端 |
| 输入类型： | 非反相 |
| 延迟时间： | 170ns |
| 电流 - 峰： | 1.6A |
| 配置数： | 1 |
| 输出数： | 1 |
| 高端电压 - 最大（自引导启动）： | 500V |
| 电源电压： | 12 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
IR2125 (S) & (PbF)
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15V, C L = 3300 pF and T A = 25 ° C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figures 3 through 6.
Symbol
Definition
Figure Min. Typ. Max. Units Test Conditions
t on
Turn-On Propagation Delay
7
—
170
240
V IN = 0 & 5V
t off
t sd
t r
t f
t cs
t err
Turn-Off Propagation Delay
ERR Shutdown Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
CS Shutdown Propagation Delay
CS to ERR Pull-Up Propagation Delay
8
9
10
11
12
13
—
—
—
—
—
—
200
1.7
43
26
0.7
9.0
270
2.2
60
35
1.2
12
ns
μ s
ns
μ s
V S = 0 to 600V
C ERR = 270 pF
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15V and T A = 25 ° C unless otherwise specified. The V IN , V TH and I IN parameters are referenced to
COM. The V O and I O parameters are referenced to V S .
Symbol
Definition
Figure Min. Typ. Max. Units Test Conditions
V IH
V IL
V CSTH+
V CSTH-
V OH
V OL
I LK
I QBS
I QCC
Logic “1” Input Voltage
Logic “0” Input Voltage
CS Input Positive Going Threshold
CS Input Negative Going Threshold
High Level Output Voltage, V BIAS - V O
Low Level Output Voltage, V O
Offset Supply Leakage Current
Quiescent V BS Supply Current
Quiescent V CC Supply Current
14
15
16
17
18
19
20
21
22
2.2
—
150
130
—
—
—
—
—
—
—
230
210
—
—
—
400
700
—
0.8
320
300
100
100
50
1000
1200
V
mV
I O = 0A
I O = 0A
V B = V S = 500V
V IN = V CS = 0V or 5V
V IN = V CS = 0V or 5V
I IN+
I IN-
I CS+
I CS-
V BSUV+
Logic “1” Input Bias Current
Logic “0” Input Bias Current
“High” CS Bias Current
“Low” CS Bias Current
V BS Supply Undervoltage Positive Going
23
24
25
26
27
—
—
—
—
8.5
4.5
—
4.5
—
9.2
10
1.0
10
1.0
10.0
μ A
V IN = 5V
V IN = 0V
V CS = 3V
V CS = 0V
Threshold
V BSUV-
V BS Supply Undervoltage Negative Going
28
7.7
8.3
9.0
V CCUV+
Threshold
V CC Supply Undervoltage Positive Going
29
8.3
8.9
9.6
V
Threshold
V CCUV-
V CC Supply Undervoltage Negative Going
30
7.3
8.0
8.7
Threshold
I ERR
I ERR+
ERR Timing Charge Current
ERR Pull-Up Current
31
32
65
8.0
100
15
130
—
μ A
V IN = 5V, V CS = 3V
ERR < V ERR+
V IN = 5V, V CS = 3V
mA
ERR > V ERR+
I ERR-
ERR Pull-Down Current
33
16
30
—
V IN = 0V
I O+
I O-
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
34
35
1.0
2.0
1.6
3.3
—
—
A
V O = 0V, V IN = 5V
PW ≤ 10 μ s
V O = 15V, V IN = 0V
PW ≤ 10 μ s
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