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参数资料
| 型号： | IR2125STR |
| 厂商： | International Rectifier |
| 文件页数： | 1/17页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER LIMITING 16SOIC |
| 标准包装： | 1,000 |
| 配置： | 高端 |
| 输入类型： | 非反相 |
| 延迟时间： | 170ns |
| 电流 - 峰： | 1.6A |
| 配置数： | 1 |
| 输出数： | 1 |
| 高端电压 - 最大（自引导启动）： | 500V |
| 电源电压： | 12 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 带卷 (TR) |
Data Sheet No. PD60017 Rev.Q
IR2125 (S) & (PbF)
CURRENT LIMITING SINGLE CHANNEL DRIVER
Features
Product Summary
? Floating channel designed for bootstrap operation
Fully operational to +500V
V OFFSET
500V max.
?
?
?
?
?
?
?
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 12 to 18V
Undervoltage lockout
Current detection and limiting loop to limit driven
power transistor current
Error lead indicates fault conditions and programs
shutdown time
Output in phase with input
2.5V, 5V and 15V input logic compatible
Also available LEAD-Free
I O +/-
V OUT
V CSth
t on/off (typ.)
Packages
1A / 2A
12 - 18V
230 mV
150 & 150 ns
Description
The IR2125(S) is a high voltage, high speed power
MOSFET and IGBT driver with over-current limiting
protection circuitry. Proprietary HVIC and latch im-
mune CMOS technologies enable ruggedized mono-
lithic construction. Logic inputs are compatible with
standard CMOS or LSTTL outputs, down to 2.5V
logic. The output driver features a high pulse current
8-Lead PDIP
16-Lead SOIC
(Wide Body)
buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the
driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external
capacitor which directly controls the time interval between detection of the over-current limiting conditions and
latched shutdown. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high
or low side configuration which operates up to 500 volts.
Typical Connection
up to 500V
(Refer to Lead Assignments
for correct pin configura-
V CC
IN
V CC
IN
ERR
V B
HO
CS
tion). This/These diagram(s)
show electrical connections
COM
V S
TO
LOAD
only. Please refer to our
Application Notes and
DesignTips for proper circuit
board layout.
www.irf.com
1
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| IR2125STRPBF | 功能描述:功率驱动器IC 1 CURRENT LIMIT PRGM SHUTDOWN ERROR PIN RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2125Z | 制造商:International Rectifier 功能描述:MOSFET DRVR 400V 2A 1-OUT Hi Side Non-Inv 8-Pin MO-036AA 制造商:International Rectifier 功能描述:MOSFET DRVR 400V 2A 1-OUT HI SIDE NON-INV 8PIN MO-036AA - Bulk 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER, HIGH-SPEED MO-036AA-8; Device Type:IGBT, MOSFET; Module Configuration:High Side; Peak Output Current:2A; Supply Voltage Min:12V; Supply Voltage Max:18V; Driver Case Style:MO-036AA; No. of Pins:8; Input Delay:150ns ;RoHS Compliant: No |
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| IR21271 | 功能描述:IC DRIVER 600V 200/420MA 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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