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参数资料
| 型号： | IR21367PBF |
| 厂商： | International Rectifier |
| 英文描述： | 3-PHASE BRIDGE DRIVER |
| 中文描述： | 3相桥式驱动器 |
| 文件页数： | 3/36页 |
| 文件大小： | 390K |
| 代理商： | IR21367PBF |
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3
IR2136(2)(3)(5)(6)(7)(8)(J&S)
& (PbF)
Note 2: All input pins and the ITRIP pin are internally clamped with a 5.2V zener diode.
Recommended Operating Conditions cont.
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recom-
mended conditions. All voltage parameters are absolute referenced to COM. The VS offset rating is tested with all supplies
biased at 15V differential.
Symbol
Definition
V
ITRIP
ITRIP input voltage
V
IN
Logic input voltage
LIN
, HIN (IR2136,IR21363(5)(6)(7)(8)),
HIN(IR21362), EN
T
A
Ambient temperature
Min.
V
SS
Max.
V
SS
+5
Units
V
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
1,2,3) = 15V unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to V
SS
and
are applicable to all six channels (H
S
1,2,3 and L
S
1,2,3). The V
O
and I
O
parameters are referenced to COM and V
S
1,2,3
and are applicable to the respective output leads: H
O1,2,3
and L
O1,2,3.
Symbol
V
IH
Definition
Min.
Typ. Max. Units Test Conditions
Logic “0” input voltage LIN1,2,3, HIN1,2,3
IR2136(3)(5)
3.0
—
—
Logic “1” input voltage HIN1,2,3
Logic “0” input voltage LIN1,2,3, HIN1,2,3
IR21366(7)(8)
Logic “1” input voltage LIN1,2,3, HIN1,2,3
IR2136(3)(5)
Logic “0” input voltage HIN1,2,3
Logic “0” input voltage LIN1,2,3, HIN1,2,3
IR21366(7)(8)
EN positive going threshold
EN negative going threshold
ITRIP positive going threshold
IR2136(2)(3)(6)
IR21365(7)(8)
ITRIP input hysteresis
IR2136(2)(3)(6)
IR21365(7)(8)
RCIN positive going threshold
RCIN input hysteresis
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
V
CC
and V
BS
supply undervoltage IR2136(8)
positive going threshold IR21362
IR21363(5)(6)(7)
IR21362
2.5
—
—
V
IL
—
—
0.8
IR21362
—
—
0.8
—
—
—
0.8
3
—
V
EN,TH+
V
EN,TH-
V
IT,TH+
0.37
3.85
0.46
4.30
0.55
4.75
V
IT,HYS
—
—
—
—
—
—
8.0
9.6
10.6
0.07
.15
8
3
0.9
0.4
8.9
10.4
11.1
—
—
—
—
1.4
0.6
9.8
11.2
11.6
V
RCIN,TH+
V
RCIN,HYS
V
OH
V
OL
V
CCUV+
V
BSUV+
I
O
= 20 mA
I
O
= 20 mA
V
V
SS
-40
V
SS
+5
125
o
C
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