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| 型号： | IR2151STR |
| 厂商： | International Rectifier |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | IC DRVR HALF BRDG SELF-OSC 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 半桥 |
| 输入类型： | 自振荡 |
| 电流 - 峰： | 125mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
IR2151
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V B
V S
V HO
V LO
V RT
V CT
I CC
I RT
dV s /dt
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
R T voltage
C T voltage
Supply current (note 1)
R T output current
Allowable offset supply voltage transient
Min.
-0.3
V B - 25
V S - 0.3
-0.3
-0.3
-0.3
—
-5
—
Max.
625
V B + 0.3
V B + 0.3
V CC + 0.3
V CC + 0.3
V CC + 0.3
25
5
50
Units
V
mA
V/ns
P D
Package power dissipation @ T A ≤ +25°C
(8 lead DIP)
—
1.0
W
(8 lead SOIC)
—
0.625
R θ JA
Thermal resistance, junction to ambient
(8 lead DIP)
—
125
°C/W
(8 lead SOIC)
—
200
T J
Junction temperature
—
150
T S
T L
Storage temperature
Lead temperature (soldering, 10 seconds)
-55
—
150
300
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V S offset rating is tested with all supplies biased at 15V differential.
Symbol
V B
V S
V HO
V LO
I CC
T A
Definition
High side sloating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
Supply current (note 1)
Ambient temperature
Min.
V S + 10
—
V S
0
—
-40
Max.
V S + 20
600
V B
V CC
5
125
Units
V
mA
°C
Note 1:
Because of the IR2151’s application specificity toward off-line supply systems, this IC contains a zener clamp
structure between the chip V CC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip V CC and the rectified line voltage and a local decoupling capacitor from
V CC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There-
fore, this circuit should not be driven by a DC, low impedance power source of greater than V CLAMP .
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR2152 | 功能描述:IC DRVR HALF BRDG SELF-OSC 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| IR2152S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Half Bridge Driver. LO Out of Phase with RT. Programmable Oscillating Frequency. 1.2us Deadtime in a 8-lead SOIC package |
| IR2153 | 功能描述:IC DRVR HALF BRDG SELF-OSC 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| IR2153_09 | 制造商:IRF 制造商全称:International Rectifier 功能描述:SELF-OSCILLATING HALF-BRIDGE DRIVER |
| IR21531 | 功能描述:IC DRVR HALF BRDG SELF-OSC 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
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