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参数资料
| 型号： | IR2153DPBF |
| 厂商： | International Rectifier |
| 英文描述： | SELF-OSCILLATING HALF-BRIDGE DRIVER |
| 中文描述： | 自激式半桥驱动器 |
| 文件页数： | 1/9页 |
| 文件大小： | 217K |
| 代理商： | IR2153DPBF |
Features
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on C
T
pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with R
T
Internal 50nsec (typ.) bootstrap diode (IR2153D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Also available LEAD-FREE
Preliminary Data Sheet No. PD60062 revM
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
Duty Cycle
50%
Tr/Tp
80/40ns
V
clamp
15.6V
Deadtime (typ.)
1.2
μ
s
Typical Connections
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
IR2153(S)
IR2153D
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
IR2153(D)(S) &(PbF)
Description
The IR2153D(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incor-
porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS
555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature
has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control
signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout
threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup.
Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by
increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing
the latch immunity of the device, and providing comprehensive ESD protection on all pins.
www.irf.com
1
Packages
8 Lead PDIP
8 Lead SOIC
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|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR2153DS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Half Bridge Driver. LO In Phase with RT. Programmable Oscillating Frequency. 1.2us Deadtime in a 8-lead SOIC package with bootstrap diode |
| IR2153PBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 15.6Vclamp 1.2 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2153S | 功能描述:IC DRVR HALF BRDG SELF-OSC 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| IR2153SPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 15.6Vclamp 1.2 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2153STR | 功能描述:IC DRVR HALF BRDG SELF-OSC 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
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