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参数资料
| 型号： | IR2155 |
| 厂商： | International Rectifier |
| 英文描述： | SELF-OSCILLATING HALF-BRIDGE DRIVER |
| 中文描述： | 自激式半桥驱动器 |
| 文件页数： | 2/6页 |
| 文件大小： | 228K |
| 代理商： | IR2155 |
IR2155
B-200 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
Parameter
Value
Symbol
V
B
V
S
V
HO
V
LO
I
CC
T
A
Definition
Min.
V
S
+ 10
—
Max.
V
S
+ 20
600
Units
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
V
S
0
V
B
V
CC
5
Low Side Output Voltage
Supply Current (Note 1)
—
mA
Ambient Temperature
-40
125
°C
Parameter
Value
Symbol
Definition
Min.
Max.
Units
V
B
V
S
V
HO
V
LO
V
RT
V
CT
I
CC
I
RT
dV
s
/dt
P
D
High Side Floating Supply Voltage
-0.3
625
High Side Floating Supply Offset Voltage
V
B
- 25
V
S
- 0.3
-0.3
V
B
+ 0.3
V
B
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
25
High Side Floating Output Voltage
Low Side Output Voltage
R
T
Voltage
C
T
Voltage
Supply Current (Note 1)
-0.3
-0.3
—
R
T
Output Current
Allowable Offset Supply Voltage Transient
Package Power Dissipation @ T
A
≤
+25°C
-5
5
—
50
V/ns
(8 Lead DIP)
—
1.0
(8 Lead SOIC)
—
0.625
R
θ
JA
Thermal Resistance, Junction to Ambient
(8 Lead DIP)
—
125
(8 Lead SOIC)
—
200
T
J
T
S
T
L
Junction Temperature
—
150
Storage Temperature
-55
150
°C
Lead Temperature (Soldering, 10 seconds)
—
300
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
V
°C/W
W
mA
V
structure between the chip V
CC
and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip V
CC
and the rectified line voltage and a local decoupling capacitor from
V
CC
to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. There-
fore, this circuit should not be driven by a DC, low impedance power source of greater than V
CLAMP
.
Note 1:
Because of the IR2155’s application specificity toward off-line supply systems, this IC contains a zener clamp
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| IR2155PBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 15.6Vclamp 1.2 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2156 | 功能描述:IC CNTL BALLAST 600V 0.5A 14-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - 照明，镇流器控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 类型:CCFL 控制器 频率:40 ~ 80 kHz 电流 - 电源:5mA 电流 - 输出:- 电源电压:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC 包装:带卷 (TR) 其它名称:90-3991V+V01 |
| IR2156PBF | 功能描述:功率驱动器IC Ballast Cntrl Prog Preht Tm & Run Freq RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2156PBF | 制造商:International Rectifier 功能描述:Controller IC Output Voltage Max.:25V |
| IR2156S | 功能描述:IC CNTL BALLAST 600V 0.5A 14SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 照明，镇流器控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 类型:CCFL 控制器 频率:40 ~ 80 kHz 电流 - 电源:5mA 电流 - 输出:- 电源电压:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC 包装:带卷 (TR) 其它名称:90-3991V+V01 |
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