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参数资料
| 型号： | IR21571 |
| 厂商： | International Rectifier |
| 英文描述： | FULLY INTEGRATED BALLAST CONTROL IC |
| 中文描述： | 完全集成的镇流器控制IC |
| 文件页数： | 16/17页 |
| 文件大小： | 234K |
| 代理商： | IR21571 |
IR21571
(S)
16
www.irf.com
power supply to the upper gate driver CMOS circuitry.
Since the quiescent current in this CMOS circuitry is
very low (typically 45
μ
A in the on-state), the majority
of the drop in the V
BS
voltage when Q1 is on occurs
due to the transfer of charge from the bootstrap
capacitor to the gate of the power MOSFET.
VB should be bypassed to VS as close as possible to
the leads of the IC with a low ESR/ESL capacitor. A
PCB layout example is shown in figure 20. A rule of
thumb for the value of this capacitor is to keep its
minimum value at least 50 times the value of the total
input capacitance (Ciss) of the MOSFET or IGBT being
driven. In addition, the VS lead should be connected
directly to the high side power MOSFET source.
Figure 20: Supply bypassing PCB layout example
Figure 19: Typical bootstrap supply connection
with V
CC
charge pump from half-bridge output
(shaded area)
A high voltage, fast recovery diode D
BOOT
(the so-
called bootstrap diode) is connected between V
CC
(anode) and VB (cathode), and a capacitor C
BOOT
(the so-called bootstrap capacitor) is connected
between the VB and VS leads. During half-bridge
switching, when MOSFET Q2 is on and Q1 is off, the
bootstrap capacitor C
BOOT
is charged from the V
CC
decoupling capacitor, through the bootstrap diode
D
BOOT
, and through Q2. Alternately, when Q2 is off
and Q1 is on, the bootstrap diode is reverse-biased,
and the bootstrap capacitor (which ‘ floats’ on the
source of the upper power MOSFET) serves as the
rectifie
d
AC line
1
/
2
Bridge
output
C
VCC
R
SUPPLY
D1
D2
Q2
Q1
C
SNUBBER
V
BUS
return
+V
BUS
D
BOOT
C
BOOT
R
CS
R3
R
GLS
R
GHS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
I
VDC
CPH
RPH
RT
RUN
CT
DT
OC
LO
COM
VCC
VB
VS
HO
SD
CS
C
VCC
(surface mount)
D
Boot
(surface mount)
C
BOOT
(surface mount)
C
VCC
(through hole)
pin 1
IR21571
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR21571PBF | 功能描述:功率驱动器IC Ballast Cntrl Thrml Ovrload Prot RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR21571PBF | 制造商:International Rectifier 功能描述:Controller IC Output Voltage Max.:25V |
| IR21571S | 功能描述:IC BALLAST CONTROL 16-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 照明，镇流器控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 类型:CCFL 控制器 频率:40 ~ 80 kHz 电流 - 电源:5mA 电流 - 输出:- 电源电压:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC 包装:带卷 (TR) 其它名称:90-3991V+V01 |
| IR21571SPBF | 功能描述:功率驱动器IC BALLAST CTRL BELO 600V 15.6V VCC 150uA RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR21571STR | 功能描述:IC BALLAST CONTROL INTEG 16-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 照明，镇流器控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 类型:CCFL 控制器 频率:40 ~ 80 kHz 电流 - 电源:5mA 电流 - 输出:- 电源电压:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC 包装:带卷 (TR) 其它名称:90-3991V+V01 |
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