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参数资料
| 型号： | IR21571S |
| 厂商： | International Rectifier |
| 文件页数： | 16/18页 |
| 文件大小： | 0K |
| 描述： | IC BALLAST CONTROL 16-SOIC |
| 其它有关文件： | 16-lead SOIC Narrow Package |
| 标准包装： | 45 |
| 类型： | 镇流器控制器 |
| 频率： | 45.5 ~ 50.5 kHz |
| 电流 - 电源： | 5.5mA |
| 电流 - 输出： | 500mA |
| 电源电压： | 11.4 V ~ 15.6 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC N |
| 包装： | 管件 |
| 其它名称： | *IR21571S |
IR21571(S) & (PbF)
power supply to the upper gate driver CMOS circuitry.
rectifie
d
AC line
+V BUS
Since the quiescent current in this CMOS circuitry is
very low (typically 45 μ A in the on-state), the majority
/ 2
VDC
CPH
RPH
RT
1
2
3
4
16
15
14
13
HO
VS
VB
VCC
R GHS
C BOOT
D BOOT
R SUPPLY
D1
Q1
1
C SNUBBER
Bridge
output
of the drop in the V BS voltage when Q1 is on occurs
due to the transfer of charge from the bootstrap
capacitor to the gate of the power MOSFET.
VB should be bypassed to VS as close as possible to
the leads of the IC with a low ESR/ESL capacitor. A
RUN
5
12
COM
C VCC
PCB layout example is shown in figure 20. A rule of
CT
DT
OC
6
7
8
11
10
9
LO
CS
SD
R GLS
R3
Q2
D2
thumb for the value of this capacitor is to keep its
minimum value at least 50 times the value of the total
input capacitance (Ciss) of the MOSFET or IGBT being
driven. In addition, the VS lead should be connected
R CS
directly to the high side power MOSFET source.
V BUS return
Figure 19: Typical bootstrap supply connection
with V CC charge pump from half-bridge output
(shaded area)
A high voltage, fast recovery diode D BOOT (the so-
called bootstrap diode) is connected between V CC
(anode) and VB (cathode), and a capacitor C BOOT
(the so-called bootstrap capacitor) is connected
between the VB and VS leads. During half-bridge
IR21571
pin 1
C VCC (surface mount)
C BOOT (surface mount)
D Boot (surface mount)
C VCC (through hole)
switching, when MOSFET Q2 is on and Q1 is off, the
bootstrap capacitor C BOOT is charged from the V CC
decoupling capacitor, through the bootstrap diode
D BOOT , and through Q2. Alternately, when Q2 is off
and Q1 is on, the bootstrap diode is reverse-biased,
and the bootstrap capacitor (which ‘floats’ on the
source of the upper power MOSFET) serves as the
16
Figure 20: Supply bypassing PCB layout example
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR21571SPBF | 功能描述:功率驱动器IC BALLAST CTRL BELO 600V 15.6V VCC 150uA RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR21571STR | 功能描述:IC BALLAST CONTROL INTEG 16-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 照明，镇流器控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 类型:CCFL 控制器 频率:40 ~ 80 kHz 电流 - 电源:5mA 电流 - 输出:- 电源电压:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC 包装:带卷 (TR) 其它名称:90-3991V+V01 |
| IR21571STRPBF | 功能描述:功率驱动器IC Ballast Cntrl Thrml Ovrload Prot RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2157S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Ballast Control. Below Resonance Protection. Thermal Overload Protection. Protection from Failure to Strike. Programmable Preheat Time and Run Frequency. Programmable Deadtime in a 16-lead SOIC Narrow package |
| IR2159 | 制造商:IRF 制造商全称:International Rectifier 功能描述:DIMMING BALLAST CONTROL IC |
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