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参数资料
| 型号： | IR2172S |
| 厂商： | International Rectifier |
| 元件分类： | XO, clock |
| 英文描述： | Linear Current Sensing. Direct Digital PWM Output. 1.5us Over-current Trip Signal Delay in a 8-lead SOIC package |
| 中文描述： | 线性电流感应。直接数字PWM输出。 1.5us过流切断信号延迟的8引脚SOIC封装 |
| 文件页数： | 3/7页 |
| 文件大小： | 122K |
| 代理商： | IR2172S |
3
IR2172
ADVANCE INFORMATION
www.irf.com
Symbol
Propagation delay characteristics
fo
Carrier frequency output
f
/
T
A
Dmin
Minimum duty
Definition
Min.
Typ. Max. Units Test Conditions
—
40
—
kHz
ppm/
o
C
Temperature drift of carrier frequency
—
500
—
—
7
—
%
Dmax
Maximum duty
—
93
—
%
VIN+=+260mV,VIN-=0V
BW
fo bandwidth
15
kHz
PHS
Phase shift at 1kHz
-10
o
AC Electrical Characteristics
V
CC
= V
BS
= 15V, unless otherwise specified.
V
IN
Nominal input voltage range before saturation
|V
IN+ _
V
IN-
|
Overcurrent trip positive input voltage
Overcurrent trip negative input voltage
-260
—
260
V
OC+
V
OC-
V
OS
—
260
-260
—
—
—
Input offset voltage
-10
0
10
V
IN
= 0V (Note 1)
V
OS
/
T
A
G
Input offset voltage temperature drift
Gain (duty cycle % per V
IN
)
—
25
—
μ
V/
o
C
%/V
157
162
167
max gain error=5%
(Note 2)
G
/
T
A
I
LK
I
QBS
I
QCC
LIN
Gain temperature drift
Offset supply leakage current
—
20
—
ppm/
o
C
—
—
50
μA
V
B
= V
S
= 600V
V
S
= 0V
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Linearity (duty cycle deviation from ideal linearity
—
1
2
—
—
1
—
0.5
1
%
curve)
V
LIN
/
T
A
I
OPO
Linearity temperature drift
Digital PWM output sink current
—
.005
—
%/
o
C
20
—
—
2
—
—
I
OCC
OC output sink current
10
—
—
1
—
—
DC Electrical Characteristics
V
CC
= V
BS
= 15V, unless otherwise specified.
figure 1
V
IN
= 0 & 5V
VIN+=-260mV,VIN-=0V
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
Note 1:
±
10mV offset represents
±
1.5% duty cycle fluctuation
Note 2: Gain = (full range of duty cycle in %) / (full input voltage range).
V
IN+ = 100mVpk -pk
sine wave, gain=-3dB
V
IN
+ =100mVpk-pk
sine wave
mA
mV
mA
V
O
= 1V
V
O
= 0.1V
V
O
= 1V
V
O
= 0.1V
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