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| 型号： | IR21844STRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/24页 |
| 文件大小： | 0K |
| 描述： | IC DVR HALF BRIDGE 14-SOIC |
| 标准包装： | 2,500 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 680ns |
| 电流 - 峰： | 1.9A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC（窄型） |
| 包装： | 带卷 (TR) |
Data Sheet No. PD60174 revG
IR2184 ( 4 )(S) & (PbF)
Features
? Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
HALF-BRIDGE DRIVER
Packages
?
?
?
?
?
?
?
?
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V and 5V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4A/1.8A
Also available LEAD-FREE (PbF)
8-Lead PDIP
IR2184
8-Lead SOIC
IR2184S
14-Lead PDIP
IR21844
14-Lead SOIC
IR21844S
Dead-Time Ground Pins Ton/Toff
Description
The IR2184(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with dependent high and low
Part
IR2181/IR2183/IR2184 Feature Comparison
Cross-
Input conduction
logic prevention
HIN/LIN yes
side referenced output channels. Pro-
prietary HVIC and latch immune
CMOS technologies enable rugge-
dized monolithic construction. The
logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V
logic
2181 COM
HIN/LIN no none
21814 VSS/COM
2183 Internal 500ns COM
21834 Program 0.4 ~ 5 us VSS/COM
2184 Internal 500ns COM
IN/SD yes
21844 Program 0.4 ~ 5 us VSS/COM
180/220 ns
180/220 ns
680/270 ns
logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600
volts.
Typical Connection
up to 600V
V CC
V CC
V B
IN
IN
HO
SD
SD
COM
V S
LO
TO
LOAD
up to 600V
IR2184
HO
IR21844
V CC
V CC
V B
(Refer to Lead Assignments for correct
IN
SD
IN
SD
DT
V S
TO
LOAD
configuration). This/These diagram(s) show
electrical connections only. Please refer to
V SS
R DT
V SS
COM
LO
our Application Notes and DesignTips for
proper circuit board layout.
www.irf.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR21844STRPBF-EL | 制造商:International Rectifier 功能描述: |
| IR2184PBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 10 to 20V 1.4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2184S | 功能描述:IC DRIVER HIGH/LOW SIDE 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| IR2184SPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 10 to 20V 1.4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2184STRPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 10 to 20V 1.4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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