参数资料
| 型号： | IR3507ZMTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 15/19页 |
| 文件大小： | 0K |
| 描述： | IC CTRL XPHASE3 20-MLPQ |
| 标准包装： | 3,000 |
| 系列： | XPhase3™ |
| 应用： | 处理器 |
| 电流 - 电源： | 4mA |
| 电源电压： | 8 V ~ 28 V |
| 工作温度： | 0°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-MLPQ |
| 供应商设备封装： | 20-MLPQ（4x4） |
| 包装： | 带卷 (TR) |
IR3507Z
LAYOUT GUIDELINES
The following layout guidelines are recommended to reduce the parasitic inductance and resistance of the PCB
layout; therefore, minimizing the noise coupled to the IC.
? Dedicate at least one middle layer for a ground plane.
? Separate analog bus (EAIN, DACIN, and IOUT) from digital bus (CLKIN, PSI, PHSIN, and PHSOUT) to reduce
the noise coupling.
? Connect PGND to LGND pins of each phase IC to the ground tab, which is tied to PGND planes respectively
through vias.
? Place current sense resistors and capacitors (R CS and C CS ) close to phase IC. Use Kelvin connection for the
inductor current sense wires, but separate the two wires by ground polygon or as differential routing. The wire
from the inductor terminal to CSIN- should not cross over the fast transition nodes, i.e., switching nodes, gate
drive outputs, and bootstrap nodes.
? Place the decoupling capacitors C VCC and C VCCL as close as possible to VCC and VCCL pins of the phase IC
respectively.
? Place the phase IC as close as possible to the MOSFETs to reduce the parasitic resistance and inductance of
the gate drive paths.
? Place the input ceramic capacitors close to the drain of top MOSFET and the source of bottom MOSFET. Use
combination of different packages of ceramic capacitors.
? There are two switching power loops. One loop includes the input capacitors, top MOSFET, inductor, output
capacitors and the load; another loop consists of bottom MOSFET, inductor, output capacitors and the load.
Route the switching power paths using wide and short traces or polygons; use multiple vias for connections
between layers.
Page 15 of 19
IR Confidential
April 2, 2009
相关PDF资料 |
PDF描述 |
|---|---|
| IR3508MTRPBF | IC XPHASE3 CTLR 20-MLPQ |
| IR3508ZMTRPBF | IC CTRL XPHASE3 20MLPQ |
| IR3510MPBF | IC XPHASE CONTROL 32-MLPQ |
| IR3513ZMTRPBF | IC CTRL XPHASE3 POL 32-MLPQ |
| IR3514MTRPBF | IC XPHASE3 CONTROL HYBRD 40-MLPQ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IR3508 | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM PHASE IC |
| IR3508MPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM PHASE IC |
| IR3508MTRPBF | 功能描述:开关变换器、稳压器与控制器 XPHASE3 DDR VTT 7V 2A 3 Wire RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR3508Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM PHASE IC |
| IR3508ZMPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM PHASE IC |
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