参数资料
型号: IR3519MTRPBF
厂商: International Rectifier
文件页数: 5/10页
文件大小: 0K
描述: IC MOSFET GATE DRIVER 8-MLPD
标准包装: 3,000
配置: 高端和低端,同步
输入类型: PWM
延迟时间: 15ns
电流 - 峰: 2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 35V
电源电压: 7V
工作温度: 0°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-MLP(3x3)
包装: 带卷 (TR)
IR3519
IC PIN ORDER AND DESCRIPTION
NAME
UGATE
BOOT
PWM
GND
LGATE
VDD
EN/UV
NUMBER
1
2
3
4
5
6
7
I/O LEVEL
VIN + VDD
VIN +VDD
Up to 5V
Reference IC
VDD
Typical 7V
3.3V
DESCRIPTION
High-side driver output and input to GATEL non-overlap comparator
Bootstrapped gate drive supply – connect a capacitor to PHASE
Logic input
Power return – connect to source of synchronous MOSFET
Lower gate drive for synchronous MOSFET
IC bias supply
Bias this pin to > 2V to enable and < 0.6V to disable the IC (both gate
outputs held low). If VDD is below the under voltage lockout
threshold this pin is internally pulled low and provides an input Power
Good indicator function. If the Power Good and Enable functions are
not required this pin can be connected to the VDD pin. Do not float
this pin as incorrect operation could occur.
PH
8
VIN
Return for high-side driver, reference for GATEL non-overlap
comparator, and input to the diode emulation comparator.
Page 5 of 10
www.irf.com
8/15/08
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