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参数资料
| 型号： | IR370SG12HCB |
| 元件分类： | 晶闸管 |
| 英文描述： | 1200 V, SCR |
| 封装： | 4 INCH, WAFER |
| 文件页数： | 1/3页 |
| 文件大小： | 124K |
| 代理商： | IR370SG12HCB |
1
www.irf.com
Junction Size:
Square 370 mils
Wafer Size:
4"
V
RRM Class:
600 to 1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part:
50RIA Series
PHASE CONTROL THYRISTORS
IR370SG..HCB
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
TM
MaximumOn-stateVoltage
1.2 V
T
J = 25°C, IT = 25 A
V
DRM/VRRM Direct and Reverse Breakdown Voltage
600 to 1200 V T
J = 25°C, IDRM /IRRM = 100 A
(1)
I
GT
Max.RequiredDCGateCurrenttoTrigger
150mA
T
J = 25° C, anode supply = 6 V, resistive load
V
GT
Max. Required DC Gate Voltage to Trigger
2 V
T
J = 25° C, anode supply = 6 V, resistive load
I
H
HoldingCurrentRange
5 to 200 mA Anode supply = 6 V, resistive load
I
L
MaximumLatchingCurrent
400mA
Anode supply = 6 V, resistive load
Mechanical Characteristics
NominalBackMetalComposition,Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
NominalFrontMetalComposition,Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
ChipDimensions
370x370mils(seedrawing)
WaferDiameter
100 mm, with std. <110> flat
WaferThickness
370 m ± 10 m
MaximumWidthofSawingLine
130m
Reject Ink Dot Size
0.25mmdiameterminimum
Ink Dot Location
Seedrawing
RecommendedStorageEnvironment
Storageinoriginalcontainer,indessicated
nitrogen,withnocontamination
Preliminary Data Sheet I0212J 12/99
(1) Nitrogen flow on die edge.
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