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参数资料
| 型号： | IR480SG12HCB |
| 元件分类： | 晶闸管 |
| 英文描述： | 1200 V, SCR |
| 封装： | 4 INCH, WAFER |
| 文件页数： | 1/3页 |
| 文件大小： | 154K |
| 代理商： | IR480SG12HCB |
Junction Size:
Square 480 mils
Wafer Size:
4"
V
DRM / VRRM Class:
600 to 1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part:
T90RIA Series
PHASE CONTROL THYRISTORS
IR480SG..HCB Series
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
TM
MaximumOn-stateVoltage
1.2 V
T
J = 25°C, IT = 25 A
V
DRM / VRRM ReverseBreakdownVoltage
600 to 1200 V
T
J = 25°C, IRRM = 100 A
(1)
I
GT
Max.RequiredDCGateCurrent toTrigger
110mA
T
J = 25° C, anode supply = 6 V, resistive load
V
GT
Max.RequiredDCGateVoltage toTrigger
1.9 V
T
J = 25° C, anode supply = 6 V, resistive load
I
H
HoldingCurrentRange
10 to 200 mA
Anode supply = 6 V, resistive load
I
L
MaximumLatchingCurrent
400mA
Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Chip Dimensions
480 x 480 mils (see drawing)
Wafer Diameter
100 mm, with std. <100> flat
Wafer Thickness
370 m ± 10 m
Maximum Width of Sawing Line
130 m
Reject Ink Dot Size
0.25 mm diameter minimum
Ink Dot Location
See drawing
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
Bulletin I0207J rev. A 01/01
(1) Nitrogen flow on die edge.
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