参数资料
型号: IR51H224
厂商: International Rectifier
英文描述: SELF-OSCILLATING HALF BRIDGE
中文描述: 自激式半桥
文件页数: 1/7页
文件大小: 73K
代理商: IR51H224
Preliminary Data Sheet No. PD60083
I
IR51H(D)224
IR51H(D)320
IR51H(D)420
Features
Output Power MOSFETs in half-bridge configuration
High side gate drive designed for bootstrap operation
Bootstrap diode integrated into package (HD type)
Accurate timing control for both Power MOSFET
s
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
Internal oscillator with programmable frequency
SELF-OSCILLATING HALF BRIDGE
15.6V Zener clamped Vcc for offline operation
Half-bridge output is out of phase with R
T
Micropower startup
Description
The IR51H(D)XXX are complete high voltage, high speed, self-
oscillating half-bridge circuits. Proprietary HVIC and latch im-
mune CMOS technologies, along with the HEXFET
power
MOSFET technology, enable ruggedized single package construc-
tion. The front-end features a programmable oscillator which func-
tions similar to the CMOS 555 timer. The supply to the control
circuit has a zener clamp to simplify offline operation. The output
features two HEXFETs in a half-bridge configuration with an in-
ternally set deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and low side
VIN (max) 250V (IR51H(D)224)
400V (IR51H(D)310)
500V (IR51H(D)420)
Duty Cycle
Deadtime
50%
1.2
μ
s
Rds(on)
1.1W (IR51H(D)224)
3.0W (IR51H(D)310)
3.6W (IR51H(D)420)
PD (TA = 25
o
C)
2.0W
Package
Typical Connection
Product Summary
f
=
+
1
1 4
R
75
C
T
T
) ×
1
D1
2
3
4
6
7
9
Vcc
C O M
V O
V
IN
V
B
IR51H(D)XXX
VIN
COM
TO,
LOAD
DC Bus
R
T
C
T
R
T
C
T
External
Fast recovery diode D1 is
not required for HD type
power MOSFETs are matched to simplify
use in 50% duty cycle applications. The
device can operate up to 500 volts.
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