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参数资料
| 型号： | IR51H420 |
| 厂商： | International Rectifier |
| 英文描述： | SELF-OSCILLATING HALF-BRIDGE |
| 中文描述： | 自激式半桥 |
| 文件页数： | 3/6页 |
| 文件大小： | 184K |
| 代理商： | IR51H420 |
IR51H420
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
B
) = 12V unless otherwise specified.
Parameter
Symbol
t
rr
Reverse Recovery Time (MOSFET Body Diode)
Q
rr
Reverse Recovery Charge (MOSFET Body Diode)
DT
Deadtime, LS Turn-Off to HS Turn-On &
HS Turn-Off to LS Turn-On
D
R
T
Duty Cycle
T
A
= 25oC
Min.
---
---
---
Definition
Typ. Max. Units
240
---
0.7
---
1.2
---
Test Conditions
I
F
= 700mA
di/dt = 100A/μs
ns
μC
μs
---
50
---
%
f
OSC
= 20 kHz
Static Electrical Characteristics
V
BIAS
(V
CC
, V
B
) = 12V unless otherwise specified.
Parameter
Symbol
Supply Characteristics
V
CCUV+
V
CC
Supply Undervoltage Positive Going
Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative Going
Threshold
I
QCC
Quiescent V
CC
Supply Current
V
CLAMP
V
CC
Zener Shunt Clamp Voltage
Floating Supply Characteristics
I
QBS
Quiescent V
BS
Supply Current
I
OS
Offset Supply Leakage Current---
Oscillator I/O Characteristics
f
OSC
Oscillator Frequency
T
A
= 25oC
Min.
Typ. Max. Units
Definition
Test Conditions
---
8.4
---
V
---
8.0
---
---
---
300
15.6
---
---
μA
V
I
CC
= 5 mA
---
30
---
μA
---
50
V
B
= V
IN
= 500V
---
20
---
kHz
R
T
= 35.7 k
,
C
T
= 1 nF
R
T
= 7.04 k
,
C
T
= 1 nF
---
100
---
I
CT
V
CTUV
V
RT+
C
T
Input Current
C
T
Undervoltage Lockout
R
T
High Level Output Voltage, V
CC
- R
T
---
0.001
1.0
2.5V < V
---
---
---
---
---
---
---
μA
---
100
---
CC
< V
CCUV+
I
RT
= -100 μA
I
RT
= -1 mA
I
RT
= 100 μA
I
RT
= 1 mA
2.5V < V
CC
< V
CCUV+
---
---
---
---
---
---
---
20
200
20
200
100
8.0
4.0
mV
V
RT-
R
T
Low Level Output Voltage
V
RTUV
V
CT+
V
CT-
Output Characteristics
R
DS(on)
Static Drain-to-Source On-Resistance
V
SD
Diode Forward Voltage
R
T
Undervoltage Lockout, V
CC
- R
T
2/3 V
CC
Threshold
1/3 V
CC
Threshold
V
---
3.0
---
V
I
D
= 500mA
T
j
= 150 oC
---
0.8
---
To Order
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| IR51H737 | 制造商:IRF 制造商全称:International Rectifier 功能描述:SELF-OSCILLATING HALF-BRIDGE |
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