参数资料
型号: IRAC1166-100W
厂商: International Rectifier
文件页数: 10/25页
文件大小: 0K
描述: BOARD DEMO 100W FOR IR1166
标准包装: 1
主要目的: AC/DC,次级
输出及类型: 1,隔离
功率 - 输出: 100W
输出电压: 16V
电流 - 输出: 6.25A
输入电压: 90 ~ 264VAC
稳压器拓扑结构: 回扫
板类型: 完全填充
已供物品:
已用 IC / 零件: IR1166S,IRF7853
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IR1166SPBF-ND - IC REG CTLR SW 200V 8-SOIC
IR1166STRPBFTR-ND - IC MOSFET DRIVER N-CH 200V 8SOIC
IR1166STRPBFDKR-ND - IC MOSFET DRIVER N-CH 200V 8SOIC
IR1166STRPBFCT-ND - IC MOSFET DRIVER N-CH 200V 8SOIC
IR1166S
Detailed Pin Description
VCC: Power Supply
This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn off the IC by
pulling this pin below the minimum turn off threshold voltage, without damage to the IC.
To prevent noise problems, a bypass ceramic capacitor connected to Vcc and GND should be placed as close as possible to
the IR1166S. This pin is internally clamped.
OVT: Offset Voltage Trimming
The OVT pin will program the amount of input offset voltage for the turn-off threshold V TH1 .
The pin can be optionally tied to ground, to VCC or left floating, to select 3 ranges of input offset trimming.
This programming feature allows for accommodating different R DSon MOSFETs.
MOT: Minimum On Time
The MOT programming pin controls the amount of minimum on time. Once V TH2 is crossed for the first time, the gate signal will
become active and turn on the power FET. Spurious ringings and oscillations can trigger the input comparator off. The MOT
blanks the input comparator keeping the FET on for a minimum time.
The MOT is programmed between 200ns and 3μs (typ.) by using a resistor referenced to GND.
EN: Enable
This pin is used to activate the IC "sleep" mode by pulling the voltage level below 2.5V (typ). In sleep mode the IC will
consume a minimum amount of current. However all switching functions will be disabled and the gate will be inactive. The EN
pin voltage cannot linger between the Enable low and Enable high thresholds. The pin is intended to operate as a switch with
the pin voltage either above or below the threshold range. The Enable control pin (EN) is not intended to operate at high
frequency. For proper operation, EN positive pulse width needs to be longer than 20μs, EN negative pulse width needs to be
longer than 10μs.
Please refer to Figure 22B for the definition of EN pulse switch.
VD: Drain Voltage Sense
VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must be taken in
properly routing the connection to the power MOSFET drain.
Additional filtering and or current limiting on this pin is not recommended as it would limit switching performance of the IC.
VS: Source Voltage Sense
VS is the differential sense pin for the power MOSFET Source. This pin must not be connected directly to the power ground
pin (7) but must be used to create a Kelvin contact as close as possible to the power MOSFET source pin.
GND: Ground
This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to this point.
GATE: Gate Drive Output
This is the gate drive output of the IC. Drive voltage is internally limited and provides 1A peak source and 4A peak sink
capability. Although this pin can be directly connected to the power MOSFET gate, the use of minimal gate resistor is
recommended, especially when putting multiple FETs in parallel.
Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching
performance.
10
www.irf.com
? 2013 International Rectifier
Nov 6, 2013
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