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参数资料
| 型号： | IRAUDPS1 |
| 厂商： | International Rectifier |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER |
| 标准包装： | 1 |
| 系列： | * |
IR2085S & ( PbF)
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 12V, C LOAD = 1000 pF, and T A = 25 ° C unless otherwise specified.
Symbol
Definition
Min.
Typ.
Max. Units Test Conditions
tr
tf
fosc
tdt
tdcs
PM
Turn-on rise time
Turn-off fall time
Per channel output frequency
High/low output dead time
Overcurrent shut down delay
High/low pulse width mismatch
—
—
500
50
—
-25
40
20
—
—
200
—
60
30
—
—
—
25
nsec
KHz
nsec
V S = 0V
C T =100pF,
R T =10Kohm
pulse on CS
V S = 0V ~ 100V
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 12V, C LOAD = 1000 pF and T A = 25 ° C unless otherwise specified.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V OH
High level output voltage, (V BIAS - V O )
—
—
1.5
V OL
Ileak
I QBS
I QCC
V CS+
V CS-
U VCC+
U VCC-
U VBS+
U VBS-
I O+
I O-
Low level output voltage
Offset supply leakage current
Quiescent V BS supply current
Quiescent V CC supply current
Overcurrent shutdown threshold
Overcurrent shutdown threshold
Undervoltage positive going threshold
Undervoltage negative going threshold
High side undervoltage positive going threshold
High side undervoltage negative going threshold
Output high short circuit current
Output low short circuit current
—
—
—
—
250
150
6.8
6.3
6.8
6.3
—
—
—
—
—
—
300
200
7.3
6.8
7.3
6.8
1.0
1.0
0.1
50
150
1.5
350
250
7.8
7.3
7.8
7.3
—
—
V
μ A
mA
mV
mV
V
A
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