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参数资料
| 型号： | IRF3315L |
| 厂商： | International Rectifier |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 21A TO-262 |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 21A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 82 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 95nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1300pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
| 其它名称： | *IRF3315L |
PD - 9.1617A
PRELIMINARY
IRF3315S/L
HEXFET ? Power MOSFET
l
Advanced Process Technology
l
l
Surface Mount (IRF3315S)
Low-profile through-hole (IRF3315L)
D
V DSS = 150V
l
l
l
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
R DS(on) = 0.082 ?
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3315L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
S
D 2 P ak
Max.
I D = 21A
T O -26 2
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V ?
21
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
15
84
3.8
94
0.63
± 20
350
12
9.4
2.5
A
W
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
1.6
40
°C/W
11/7/97
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3315LPBF | 功能描述:MOSFET N-CH 150V 21A TO-262 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF3315PBF | 功能描述:MOSFET MOSFT 150V 21A 70mOhm 63.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3315S | 功能描述:MOSFET N-CH 150V 21A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF3315SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) D2PAK |
| IRF3315SL | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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