- 您现在的位置：买卖IC网 > PDF目录377503 > IRF3415S (International Rectifier) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) PDF资料下载
参数资料
| 型号： | IRF3415S |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 150伏，的Rds（on）\u003d 0.042ohm，身份证\u003d 43A章） |
| 文件页数： | 1/10页 |
| 文件大小： | 156K |
| 代理商： | IRF3415S |
IRF3415S/L
HEXFET
Power MOSFET
PD - 91509C
l
Advanced Process Technology
l
Surface Mount (IRF3415S)
l
Low-profile through-hole (IRF3415L)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
5/13/98
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low-
profile applications.
Description
V
DSS
= 150V
R
DS(on)
= 0.042
I
D
= 43A
D2
TO-262
S
D
G
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
°C/W
Parameter
Max.
43
30
150
3.8
200
1.3
± 20
590
22
20
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
相关PDF资料 |
PDF描述 |
|---|---|
| IRF3415 | Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) |
| IRF3704STRL | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB |
| IRF3704 | Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) |
| IRF3704L | Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) |
| IRF3704S | CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3415SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 43A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 150V 43A 3PIN D2PAK - Bulk |
| IRF3415SPBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 42mOhms 133.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3415STRL | 制造商:Int'L Rectifier 功能描述:Trans MOSFET N-CH 150V 43A 3-Pin(2+Tab) D2PAK T/R |
| IRF3415STRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 150V 43A 3PIN D2PAK - Tape and Reel |
| IRF3415STRLPBF | 功能描述:MOSFET MOSFT 150V 43A 42mOhm 133.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。